Spin-dependent transport in a dilute two-dimensional GaAs electron gas in an in-plane magnetic field

Chi Te Liang; Charles G. Smith; Michelle Y. Simmons; Gil Ho Kim; David A. Ritchie; Michael Pepper

doi:10.1016/S1386-9477(02)01051-2

Spin-dependent transport in a dilute two-dimensional GaAs electron gas in an in-plane magnetic field

Chi Te Liang
, Charles G. Smith
, Michelle Y. Simmons
, Gil Ho Kim
, David A. Ritchie
, Michael Pepper

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

We report low-temperature magnetoresistivity measurements of a high-quality gated two-dimensional electron gas (2DEG). In the dilute electron density limit, we show evidence for spin polarisation in an in-plane magnetic field. Using a simple model, we estimate the Landé g-factor in this dilute 2DEG to be about 3.32. This enhanced Landé g-factor compared with that of a bulk GaAs 2D electron system (0.44) is ascribed to electron-electron interaction effects at ultra-low electron densities and the fact that over the whole measurement range r_s does not vary significantly.

Original language	English
Pages (from-to)	141-142
Number of pages	2
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	18
Issue number	1-3
DOIs	https://doi.org/10.1016/S1386-9477(02)01051-2
State	Published - May 2003
Event	23rd International Conference on Low Temperature Physics - Hiroshima, Japan Duration: 20 Aug 2002 → 27 Aug 2002

Keywords

Electron-electron interactions
Spin
Spin polarisation

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10.1016/S1386-9477(02)01051-2

Cite this

@article{a61a73598a3a476fa49868778670b775,

title = "Spin-dependent transport in a dilute two-dimensional GaAs electron gas in an in-plane magnetic field",

abstract = "We report low-temperature magnetoresistivity measurements of a high-quality gated two-dimensional electron gas (2DEG). In the dilute electron density limit, we show evidence for spin polarisation in an in-plane magnetic field. Using a simple model, we estimate the Land{\'e} g-factor in this dilute 2DEG to be about 3.32. This enhanced Land{\'e} g-factor compared with that of a bulk GaAs 2D electron system (0.44) is ascribed to electron-electron interaction effects at ultra-low electron densities and the fact that over the whole measurement range rs does not vary significantly.",

keywords = "Electron-electron interactions, Spin, Spin polarisation",

author = "Liang, \{Chi Te\} and Smith, \{Charles G.\} and Simmons, \{Michelle Y.\} and Kim, \{Gil Ho\} and Ritchie, \{David A.\} and Michael Pepper",

year = "2003",

month = may,

doi = "10.1016/S1386-9477(02)01051-2",

language = "English",

volume = "18",

pages = "141--142",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-3",

note = "23rd International Conference on Low Temperature Physics ; Conference date: 20-08-2002 Through 27-08-2002",

}

TY - JOUR

T1 - Spin-dependent transport in a dilute two-dimensional GaAs electron gas in an in-plane magnetic field

AU - Liang, Chi Te

AU - Smith, Charles G.

AU - Simmons, Michelle Y.

AU - Kim, Gil Ho

AU - Ritchie, David A.

AU - Pepper, Michael

PY - 2003/5

Y1 - 2003/5

N2 - We report low-temperature magnetoresistivity measurements of a high-quality gated two-dimensional electron gas (2DEG). In the dilute electron density limit, we show evidence for spin polarisation in an in-plane magnetic field. Using a simple model, we estimate the Landé g-factor in this dilute 2DEG to be about 3.32. This enhanced Landé g-factor compared with that of a bulk GaAs 2D electron system (0.44) is ascribed to electron-electron interaction effects at ultra-low electron densities and the fact that over the whole measurement range rs does not vary significantly.

AB - We report low-temperature magnetoresistivity measurements of a high-quality gated two-dimensional electron gas (2DEG). In the dilute electron density limit, we show evidence for spin polarisation in an in-plane magnetic field. Using a simple model, we estimate the Landé g-factor in this dilute 2DEG to be about 3.32. This enhanced Landé g-factor compared with that of a bulk GaAs 2D electron system (0.44) is ascribed to electron-electron interaction effects at ultra-low electron densities and the fact that over the whole measurement range rs does not vary significantly.

KW - Electron-electron interactions

KW - Spin

KW - Spin polarisation

UR - https://www.scopus.com/pages/publications/0038518566

U2 - 10.1016/S1386-9477(02)01051-2

DO - 10.1016/S1386-9477(02)01051-2

M3 - Conference article

AN - SCOPUS:0038518566

SN - 1386-9477

VL - 18

SP - 141

EP - 142

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-3

T2 - 23rd International Conference on Low Temperature Physics

Y2 - 20 August 2002 through 27 August 2002

ER -

Spin-dependent transport in a dilute two-dimensional GaAs electron gas in an in-plane magnetic field

Abstract

Keywords

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