Spatially-Resolved Remote Plasma Atomic Layer Deposition Process for Moisture Barrier Al2O3 Films

Sang Heon Yong; Sun Jung Kim; Sung Min Cho; Heeyeop Chae

doi:10.3938/jkps.73.45

Spatially-Resolved Remote Plasma Atomic Layer Deposition Process for Moisture Barrier Al₂O₃ Films

Sang Heon Yong
, Sun Jung Kim
, Sung Min Cho
, Heeyeop Chae

Department of Chemical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this study, nanoscale-thickness Al₂O₃ layers for moisture barrier films were developed by a spatially resolved remote plasma atomic layer deposition process. The effect of various process parameters was investigated on the atomic concentration of Al₂O₃ films including the substrate temperature, plasma power, and scanning speed of the substrates. Carbon components were identified as major impurities in the films and is reduced at high temperature, high plasma power and low speed. Optimum conditions are maximum temperature of 80 °C to prevent plastic substrate deformation, a maximum plasma power of 150 W without surface damage and maximum speed of 125 mm/sec to maintain a low carbon contents. The water vapor transmission rate (WVTR) of 3.2 × 10 ⁻⁴ g/(m²·day) was achieved with 30 nm-thick film in optimum condition.

Original language	English
Pages (from-to)	45-52
Number of pages	8
Journal	Journal of the Korean Physical Society
Volume	73
Issue number	1
DOIs	https://doi.org/10.3938/jkps.73.45
State	Published - 1 Jul 2018

Keywords

Low temperature AlO
Moisture barrier films
Remote plasma atomic layer deposition
Spatially resolved atomic layer deposition

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10.3938/jkps.73.45

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title = "Spatially-Resolved Remote Plasma Atomic Layer Deposition Process for Moisture Barrier Al2O3 Films",

abstract = "In this study, nanoscale-thickness Al2O3 layers for moisture barrier films were developed by a spatially resolved remote plasma atomic layer deposition process. The effect of various process parameters was investigated on the atomic concentration of Al2O3 films including the substrate temperature, plasma power, and scanning speed of the substrates. Carbon components were identified as major impurities in the films and is reduced at high temperature, high plasma power and low speed. Optimum conditions are maximum temperature of 80 °C to prevent plastic substrate deformation, a maximum plasma power of 150 W without surface damage and maximum speed of 125 mm/sec to maintain a low carbon contents. The water vapor transmission rate (WVTR) of 3.2 × 10 −4 g/(m2·day) was achieved with 30 nm-thick film in optimum condition.",

keywords = "Low temperature AlO, Moisture barrier films, Remote plasma atomic layer deposition, Spatially resolved atomic layer deposition",

author = "Yong, \{Sang Heon\} and Kim, \{Sun Jung\} and Cho, \{Sung Min\} and Heeyeop Chae",

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doi = "10.3938/jkps.73.45",

language = "English",

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TY - JOUR

T1 - Spatially-Resolved Remote Plasma Atomic Layer Deposition Process for Moisture Barrier Al2O3 Films

AU - Yong, Sang Heon

AU - Kim, Sun Jung

AU - Cho, Sung Min

AU - Chae, Heeyeop

PY - 2018/7/1

Y1 - 2018/7/1

N2 - In this study, nanoscale-thickness Al2O3 layers for moisture barrier films were developed by a spatially resolved remote plasma atomic layer deposition process. The effect of various process parameters was investigated on the atomic concentration of Al2O3 films including the substrate temperature, plasma power, and scanning speed of the substrates. Carbon components were identified as major impurities in the films and is reduced at high temperature, high plasma power and low speed. Optimum conditions are maximum temperature of 80 °C to prevent plastic substrate deformation, a maximum plasma power of 150 W without surface damage and maximum speed of 125 mm/sec to maintain a low carbon contents. The water vapor transmission rate (WVTR) of 3.2 × 10 −4 g/(m2·day) was achieved with 30 nm-thick film in optimum condition.

AB - In this study, nanoscale-thickness Al2O3 layers for moisture barrier films were developed by a spatially resolved remote plasma atomic layer deposition process. The effect of various process parameters was investigated on the atomic concentration of Al2O3 films including the substrate temperature, plasma power, and scanning speed of the substrates. Carbon components were identified as major impurities in the films and is reduced at high temperature, high plasma power and low speed. Optimum conditions are maximum temperature of 80 °C to prevent plastic substrate deformation, a maximum plasma power of 150 W without surface damage and maximum speed of 125 mm/sec to maintain a low carbon contents. The water vapor transmission rate (WVTR) of 3.2 × 10 −4 g/(m2·day) was achieved with 30 nm-thick film in optimum condition.

KW - Low temperature AlO

KW - Moisture barrier films

KW - Remote plasma atomic layer deposition

KW - Spatially resolved atomic layer deposition

UR - https://www.scopus.com/pages/publications/85049737533

U2 - 10.3938/jkps.73.45

DO - 10.3938/jkps.73.45

M3 - Article

AN - SCOPUS:85049737533

SN - 0374-4884

VL - 73

SP - 45

EP - 52

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

Spatially-Resolved Remote Plasma Atomic Layer Deposition Process for Moisture Barrier Al₂O₃ Films

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Keywords

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