Spatially resolved photoluminescence in Ingan/gan quantum wells by near-field scanning optical microscopy

M. S. Jeong; J. Y. Kim; Y. W. Kim; J. O. White; E. K. Suh; C. H. Hong; H. J. Lee

doi:10.1063/1.1391227

Spatially resolved photoluminescence in Ingan/gan quantum wells by near-field scanning optical microscopy

M. S. Jeong
, J. Y. Kim
, Y. W. Kim
, J. O. White
, E. K. Suh
, C. H. Hong
, H. J. Lee

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

Spatially and spectrally resolved photoluminescence (PL) from InGaN/GaN quantum wells is obtained using near-field scanning optical microscopy (NSOM). Samples displaying high macroscopic PL intensity revealed nonuniform intensity and linewidth but nearly uniform peak position. It suggests that the contrast in the NSOM image reflects nonuniform distribution of dislocations or defects which act as nonradiative recombination centers. The formation of quantum dots with size of 30 ± 25 nm and their size-dependent interaction with dislocations were observed in plan-view transmission electron microscopy. It is likely that the high luminescence efficiency is due to the efficient localization of excitons in high-density quantum dots located in regions with fewer dislocations.

Original language	English
Pages (from-to)	976-978
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	7
DOIs	https://doi.org/10.1063/1.1391227
State	Published - 13 Aug 2001
Externally published	Yes

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title = "Spatially resolved photoluminescence in Ingan/gan quantum wells by near-field scanning optical microscopy",

abstract = "Spatially and spectrally resolved photoluminescence (PL) from InGaN/GaN quantum wells is obtained using near-field scanning optical microscopy (NSOM). Samples displaying high macroscopic PL intensity revealed nonuniform intensity and linewidth but nearly uniform peak position. It suggests that the contrast in the NSOM image reflects nonuniform distribution of dislocations or defects which act as nonradiative recombination centers. The formation of quantum dots with size of 30 ± 25 nm and their size-dependent interaction with dislocations were observed in plan-view transmission electron microscopy. It is likely that the high luminescence efficiency is due to the efficient localization of excitons in high-density quantum dots located in regions with fewer dislocations.",

author = "Jeong, \{M. S.\} and Kim, \{J. Y.\} and Kim, \{Y. W.\} and White, \{J. O.\} and Suh, \{E. K.\} and Hong, \{C. H.\} and Lee, \{H. J.\}",

year = "2001",

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doi = "10.1063/1.1391227",

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T1 - Spatially resolved photoluminescence in Ingan/gan quantum wells by near-field scanning optical microscopy

AU - Jeong, M. S.

AU - Kim, J. Y.

AU - Kim, Y. W.

AU - White, J. O.

AU - Suh, E. K.

AU - Hong, C. H.

AU - Lee, H. J.

PY - 2001/8/13

Y1 - 2001/8/13

N2 - Spatially and spectrally resolved photoluminescence (PL) from InGaN/GaN quantum wells is obtained using near-field scanning optical microscopy (NSOM). Samples displaying high macroscopic PL intensity revealed nonuniform intensity and linewidth but nearly uniform peak position. It suggests that the contrast in the NSOM image reflects nonuniform distribution of dislocations or defects which act as nonradiative recombination centers. The formation of quantum dots with size of 30 ± 25 nm and their size-dependent interaction with dislocations were observed in plan-view transmission electron microscopy. It is likely that the high luminescence efficiency is due to the efficient localization of excitons in high-density quantum dots located in regions with fewer dislocations.

AB - Spatially and spectrally resolved photoluminescence (PL) from InGaN/GaN quantum wells is obtained using near-field scanning optical microscopy (NSOM). Samples displaying high macroscopic PL intensity revealed nonuniform intensity and linewidth but nearly uniform peak position. It suggests that the contrast in the NSOM image reflects nonuniform distribution of dislocations or defects which act as nonradiative recombination centers. The formation of quantum dots with size of 30 ± 25 nm and their size-dependent interaction with dislocations were observed in plan-view transmission electron microscopy. It is likely that the high luminescence efficiency is due to the efficient localization of excitons in high-density quantum dots located in regions with fewer dislocations.

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DO - 10.1063/1.1391227

M3 - Article

AN - SCOPUS:0035855063

SN - 0003-6951

VL - 79

SP - 976

EP - 978

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Spatially resolved photoluminescence in Ingan/gan quantum wells by near-field scanning optical microscopy

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