@inproceedings{5597e7ad6f3e469b9d1cf3b972891143,
title = "Solution-processed oxide thin film transistors with indium zinc tin oxide semiconductor: Nitrogen effect",
abstract = "Thin film transistors (TFTs) with nitrogen incorporated indium zinc tin oxide (IZTO:N) channel layer were fabricated and characterized. For the IZTO:N channel, TFTs was fabricated on heavily doped Si as a common gate electrode and silicon nitride (SiNx) was used as a gate dielectric layer. The IZTO:N layer was formed by spin-coating as precursor type solution and annealed at 600°C The precursors for indium, zinc, and tin were indium chloride, zinc chloride, and tin chloride. The incorporation of nitrogen was accomplished by addition of NH4OH solution. The IZTO:N TFT prepared with the precursor solution having 0.7\% NH4OH has show the performance in mobility 1.2cm2/Vs, Ion/off of 106 and threshold voltage of 8.5 V.",
author = "Kim, \{Bong Jin\} and Kim, \{Hyung Jun\} and Jung, \{Sung Mok\} and Yoon, \{Tae Sik\} and Kim, \{Yong Sang\} and Lee, \{Hyun Ho\}",
year = "2010",
doi = "10.1149/1.3481250",
language = "English",
isbn = "9781566778244",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "295--299",
booktitle = "Thin Film Transistors 10, TFT 10",
edition = "5",
}