Solution-processed metal oxide TFTs and circuits on a plastic by photochemical activation process

Here, we report a general route to form high-performance and stable solution-processed metal-oxide TFTs and circuits at room-temperature by deep-ultraviolet (DUV) photochemical activation The photo-enhanced DUV annealing induces condensation and densification of amorphous metal-oxide semiconductor films via photochemical reactions and film microstructure modifications by energetic photons. It was found that the photochemical annealing is effective in fabricating most metal-oxide semiconductors and the metal-oxide TFTs typically demonstrate comparable or even better electrical performance and operational stability with high-temperature (≥350C) annealed devices. The room-temperature fabricated metal-oxide TFTs and circuits have shown field-effect mobilities of more than 14 and 7 cm² V^-1 s^-1 on glass and polymeric substrates, respectively. The fabricated 7-stage ring oscillators on polymeric substrates indicate oscillation frequency of > 340 kHz corresponding to propagation delay of < 210 ns per stage.