Solution processed IZTO thin film transistor on silicon nitride dielectric layer

Bong Jin Kim; Hyung Jun Kim; Tae Sik Yoon; Yong Sang Kim; Doo Hyoung Lee; Youngmin Choi; Byung Hwan Ryu; Hyun Ho Lee

doi:10.1016/j.jiec.2010.12.003

Solution processed IZTO thin film transistor on silicon nitride dielectric layer

Bong Jin Kim
, Hyung Jun Kim
, Tae Sik Yoon
, Yong Sang Kim
, Doo Hyoung Lee
, Youngmin Choi
, Byung Hwan Ryu
, Hyun Ho Lee

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Solution process-based inorganic indium-zinc-tin oxide semiconductor layer was applied to fabricate a thin film transistor (TFT) by annealing at 600°C on plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiN_x) dielectric layer. The spin-coated indium-zinc-tin oxide (IZTO) transistor has a field-effect mobility of 4.36cm²/Vs with on/off ratio of 10⁵ having the subthreshold voltage shift of 0.537V/dec. The device characterization and surface analysis after annealing were performed and compared with results before annealing. Our results offer the feasibility of solution-based oxide semiconductor transistors for cost-effective display or other electronic devices.

Original language	English
Pages (from-to)	96-99
Number of pages	4
Journal	Journal of Industrial and Engineering Chemistry
Volume	17
Issue number	1
DOIs	https://doi.org/10.1016/j.jiec.2010.12.003
State	Published - 25 Jan 2011
Externally published	Yes

Keywords

Indium-zinc-tin oxide
Silicon nitride
TFT

Access to Document

10.1016/j.jiec.2010.12.003

Cite this

@article{f76c07b8ff9f4b30b806085b9ca140ed,

title = "Solution processed IZTO thin film transistor on silicon nitride dielectric layer",

abstract = "Solution process-based inorganic indium-zinc-tin oxide semiconductor layer was applied to fabricate a thin film transistor (TFT) by annealing at 600°C on plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) dielectric layer. The spin-coated indium-zinc-tin oxide (IZTO) transistor has a field-effect mobility of 4.36cm2/Vs with on/off ratio of 105 having the subthreshold voltage shift of 0.537V/dec. The device characterization and surface analysis after annealing were performed and compared with results before annealing. Our results offer the feasibility of solution-based oxide semiconductor transistors for cost-effective display or other electronic devices.",

keywords = "Indium-zinc-tin oxide, Silicon nitride, TFT",

author = "Kim, \{Bong Jin\} and Kim, \{Hyung Jun\} and Yoon, \{Tae Sik\} and Kim, \{Yong Sang\} and Lee, \{Doo Hyoung\} and Youngmin Choi and Ryu, \{Byung Hwan\} and Lee, \{Hyun Ho\}",

year = "2011",

month = jan,

day = "25",

doi = "10.1016/j.jiec.2010.12.003",

language = "English",

volume = "17",

pages = "96--99",

journal = "Journal of Industrial and Engineering Chemistry",

issn = "1226-086X",

publisher = "Korean Society of Industrial Engineering Chemistry",

number = "1",

}

TY - JOUR

T1 - Solution processed IZTO thin film transistor on silicon nitride dielectric layer

AU - Kim, Bong Jin

AU - Kim, Hyung Jun

AU - Yoon, Tae Sik

AU - Kim, Yong Sang

AU - Lee, Doo Hyoung

AU - Choi, Youngmin

AU - Ryu, Byung Hwan

AU - Lee, Hyun Ho

PY - 2011/1/25

Y1 - 2011/1/25

N2 - Solution process-based inorganic indium-zinc-tin oxide semiconductor layer was applied to fabricate a thin film transistor (TFT) by annealing at 600°C on plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) dielectric layer. The spin-coated indium-zinc-tin oxide (IZTO) transistor has a field-effect mobility of 4.36cm2/Vs with on/off ratio of 105 having the subthreshold voltage shift of 0.537V/dec. The device characterization and surface analysis after annealing were performed and compared with results before annealing. Our results offer the feasibility of solution-based oxide semiconductor transistors for cost-effective display or other electronic devices.

AB - Solution process-based inorganic indium-zinc-tin oxide semiconductor layer was applied to fabricate a thin film transistor (TFT) by annealing at 600°C on plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) dielectric layer. The spin-coated indium-zinc-tin oxide (IZTO) transistor has a field-effect mobility of 4.36cm2/Vs with on/off ratio of 105 having the subthreshold voltage shift of 0.537V/dec. The device characterization and surface analysis after annealing were performed and compared with results before annealing. Our results offer the feasibility of solution-based oxide semiconductor transistors for cost-effective display or other electronic devices.

KW - Indium-zinc-tin oxide

KW - Silicon nitride

KW - TFT

UR - https://www.scopus.com/pages/publications/79952696771

U2 - 10.1016/j.jiec.2010.12.003

DO - 10.1016/j.jiec.2010.12.003

M3 - Article

AN - SCOPUS:79952696771

SN - 1226-086X

VL - 17

SP - 96

EP - 99

JO - Journal of Industrial and Engineering Chemistry

JF - Journal of Industrial and Engineering Chemistry

IS - 1

ER -

Solution processed IZTO thin film transistor on silicon nitride dielectric layer

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this