Solution-processed InGaZnO-based thin film transistors for printed electronics applications

This letter reports the utility of using the sol-gel process for exploring the library of multicomponent ZnO-based oxides as an active layer of thin film transistors. We chose InGaZnO as a starting material and modulated the Ga content to examine the potential of this material. Increasing the Ga ratio from 0.1 to 1 brought about a dynamic shift in the electrical behavior from conductor to semiconductor. This exploratory work critically helped us fabricate a device with robust device performance (a mobility of 1∼2 cm² V ^-1 s^-1 for the 400 °C -sintered samples and 0.2 cm² V^-1 s^-1 for the 300 °C -sintered samples).