Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate
- S. Balakumar
- , C. H. Tung
- , G. Q. Lo
- , R. Kumar
- , N. Balasubramanian
- , D. L. Kwong
- , Gao Fei
- , S. J. Lee
- Agency for Science, Technology and Research, Singapore
- National University of Singapore
Research output: Contribution to journal › Article › peer-review
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