Sn doped In2O3 nanowires for enhanced photocurrent generation for photoelectrodes

Kyung Soo Park; Chan Gi Lee; Hyun Seon Hong; Il Seuk Lee; S. Joon Kwon; Jae Gwan Park

doi:10.1016/j.ceramint.2014.03.186

Sn doped In₂O₃ nanowires for enhanced photocurrent generation for photoelectrodes

Kyung Soo Park
, Chan Gi Lee
, Hyun Seon Hong
, Il Seuk Lee
, S. Joon Kwon
, Jae Gwan Park

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

High-quality single-crystalline Sn-doped In₂O₃ (ITO) nanowires (NWs) with diameters of about 60-80 nm and lengths of several tens of micrometers were produced using a simple thermal co-evaporation method at a substrate temperature of ∼540°C. The electrical conductivity of as-synthesized ITO NW was ∼115.9 S/cm at room temperature. Photocurrent generation devices were prepared by self-assembling di(3-aminopropyl)viologen and Ru(2,2′-bipyridine-4,4′-dicarboxylic acid)₂(NCS) ₂ on the surface of ITO NWs. The maximum photocurrent density of the device with an ITO NW electrode under illumination of 100 mW/cm² was 11.05 μA/cm², which is about three orders of magnitude larger than that of the device with a bare ITO thin film electrode. The high photocurrent density could be attributed to the large surface area, high crystallinity, and electrical conductivity of the ITO NW electrode.

Original language	English
Pages (from-to)	11727-11733
Number of pages	7
Journal	Ceramics International
Volume	40
Issue number	8 PART A
DOIs	https://doi.org/10.1016/j.ceramint.2014.03.186
State	Published - Sep 2014
Externally published	Yes

Keywords

Conductivity
Crystallinity
ITO nanowire electrode
Photocurrent generation
Surface area

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.ceramint.2014.03.186

Cite this

@article{e30259ce2b0e4dfa8135f9ec8e842916,

title = "Sn doped In2O3 nanowires for enhanced photocurrent generation for photoelectrodes",

abstract = "High-quality single-crystalline Sn-doped In2O3 (ITO) nanowires (NWs) with diameters of about 60-80 nm and lengths of several tens of micrometers were produced using a simple thermal co-evaporation method at a substrate temperature of ∼540°C. The electrical conductivity of as-synthesized ITO NW was ∼115.9 S/cm at room temperature. Photocurrent generation devices were prepared by self-assembling di(3-aminopropyl)viologen and Ru(2,2′-bipyridine-4,4′-dicarboxylic acid)2(NCS) 2 on the surface of ITO NWs. The maximum photocurrent density of the device with an ITO NW electrode under illumination of 100 mW/cm2 was 11.05 μA/cm2, which is about three orders of magnitude larger than that of the device with a bare ITO thin film electrode. The high photocurrent density could be attributed to the large surface area, high crystallinity, and electrical conductivity of the ITO NW electrode.",

keywords = "Conductivity, Crystallinity, ITO nanowire electrode, Photocurrent generation, Surface area",

author = "Park, \{Kyung Soo\} and Lee, \{Chan Gi\} and Hong, \{Hyun Seon\} and Lee, \{Il Seuk\} and Kwon, \{S. Joon\} and Park, \{Jae Gwan\}",

year = "2014",

month = sep,

doi = "10.1016/j.ceramint.2014.03.186",

language = "English",

volume = "40",

pages = "11727--11733",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

number = "8 PART A",

}

TY - JOUR

T1 - Sn doped In2O3 nanowires for enhanced photocurrent generation for photoelectrodes

AU - Park, Kyung Soo

AU - Lee, Chan Gi

AU - Hong, Hyun Seon

AU - Lee, Il Seuk

AU - Kwon, S. Joon

AU - Park, Jae Gwan

PY - 2014/9

Y1 - 2014/9

N2 - High-quality single-crystalline Sn-doped In2O3 (ITO) nanowires (NWs) with diameters of about 60-80 nm and lengths of several tens of micrometers were produced using a simple thermal co-evaporation method at a substrate temperature of ∼540°C. The electrical conductivity of as-synthesized ITO NW was ∼115.9 S/cm at room temperature. Photocurrent generation devices were prepared by self-assembling di(3-aminopropyl)viologen and Ru(2,2′-bipyridine-4,4′-dicarboxylic acid)2(NCS) 2 on the surface of ITO NWs. The maximum photocurrent density of the device with an ITO NW electrode under illumination of 100 mW/cm2 was 11.05 μA/cm2, which is about three orders of magnitude larger than that of the device with a bare ITO thin film electrode. The high photocurrent density could be attributed to the large surface area, high crystallinity, and electrical conductivity of the ITO NW electrode.

AB - High-quality single-crystalline Sn-doped In2O3 (ITO) nanowires (NWs) with diameters of about 60-80 nm and lengths of several tens of micrometers were produced using a simple thermal co-evaporation method at a substrate temperature of ∼540°C. The electrical conductivity of as-synthesized ITO NW was ∼115.9 S/cm at room temperature. Photocurrent generation devices were prepared by self-assembling di(3-aminopropyl)viologen and Ru(2,2′-bipyridine-4,4′-dicarboxylic acid)2(NCS) 2 on the surface of ITO NWs. The maximum photocurrent density of the device with an ITO NW electrode under illumination of 100 mW/cm2 was 11.05 μA/cm2, which is about three orders of magnitude larger than that of the device with a bare ITO thin film electrode. The high photocurrent density could be attributed to the large surface area, high crystallinity, and electrical conductivity of the ITO NW electrode.

KW - Conductivity

KW - Crystallinity

KW - ITO nanowire electrode

KW - Photocurrent generation

KW - Surface area

UR - https://www.scopus.com/pages/publications/84903892778

U2 - 10.1016/j.ceramint.2014.03.186

DO - 10.1016/j.ceramint.2014.03.186

M3 - Article

AN - SCOPUS:84903892778

SN - 0272-8842

VL - 40

SP - 11727

EP - 11733

JO - Ceramics International

JF - Ceramics International

IS - 8 PART A

ER -