Small-signal modulation characteristics for 1.5 μm lattice-matched InGaNAs/GaAs and InGaAs/InP quantum well lasers

Woon Ho Seo; Canice O'Brien; John F. Donegan; Yoonseok Lee; Gil Ho Kim

doi:10.1007/s11082-004-4625-8

Small-signal modulation characteristics for 1.5 μm lattice-matched InGaNAs/GaAs and InGaAs/InP quantum well lasers

Woon Ho Seo
, Canice O'Brien
, John F. Donegan
, Yoonseok Lee
, Gil Ho Kim

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The small-signal modulation characteristics of 1.5 μm lattice-matched InGaNAs/GaAs and InGaAs/InP quantum well lasers and their temperature dependence have been calculated. It is found that the maximum bandwidth of the InGaNAs/GaAs quantum well lasers is about 2.3 times larger than that of the InGaAs/InP quantum well lasers due to the high differential gain which results from the large electron effective mass in the dilute nitride system. The slope efficiency for the 3 dB bandwidth as a function of optical density is twice as large for InGaNAs/GaAs as for InGaAs/InP quantum well lasers.

Original language	English
Pages (from-to)	1147-1153
Number of pages	7
Journal	Optical and Quantum Electronics
Volume	36
Issue number	13
DOIs	https://doi.org/10.1007/s11082-004-4625-8
State	Published - Oct 2004

Keywords

3 dB bandwidth
Semiconductor quantum wells
Small signal modulation

Access to Document

10.1007/s11082-004-4625-8

Cite this

@article{57a852fa6d754a12b1f279deba233f14,

title = "Small-signal modulation characteristics for 1.5 μm lattice-matched InGaNAs/GaAs and InGaAs/InP quantum well lasers",

abstract = "The small-signal modulation characteristics of 1.5 μm lattice-matched InGaNAs/GaAs and InGaAs/InP quantum well lasers and their temperature dependence have been calculated. It is found that the maximum bandwidth of the InGaNAs/GaAs quantum well lasers is about 2.3 times larger than that of the InGaAs/InP quantum well lasers due to the high differential gain which results from the large electron effective mass in the dilute nitride system. The slope efficiency for the 3 dB bandwidth as a function of optical density is twice as large for InGaNAs/GaAs as for InGaAs/InP quantum well lasers.",

keywords = "3 dB bandwidth, Semiconductor quantum wells, Small signal modulation",

author = "Seo, \{Woon Ho\} and Canice O'Brien and Donegan, \{John F.\} and Yoonseok Lee and Kim, \{Gil Ho\}",

year = "2004",

month = oct,

doi = "10.1007/s11082-004-4625-8",

language = "English",

volume = "36",

pages = "1147--1153",

journal = "Optical and Quantum Electronics",

issn = "0306-8919",

publisher = "Springer",

number = "13",

}

TY - JOUR

T1 - Small-signal modulation characteristics for 1.5 μm lattice-matched InGaNAs/GaAs and InGaAs/InP quantum well lasers

AU - Seo, Woon Ho

AU - O'Brien, Canice

AU - Donegan, John F.

AU - Lee, Yoonseok

AU - Kim, Gil Ho

PY - 2004/10

Y1 - 2004/10

N2 - The small-signal modulation characteristics of 1.5 μm lattice-matched InGaNAs/GaAs and InGaAs/InP quantum well lasers and their temperature dependence have been calculated. It is found that the maximum bandwidth of the InGaNAs/GaAs quantum well lasers is about 2.3 times larger than that of the InGaAs/InP quantum well lasers due to the high differential gain which results from the large electron effective mass in the dilute nitride system. The slope efficiency for the 3 dB bandwidth as a function of optical density is twice as large for InGaNAs/GaAs as for InGaAs/InP quantum well lasers.

AB - The small-signal modulation characteristics of 1.5 μm lattice-matched InGaNAs/GaAs and InGaAs/InP quantum well lasers and their temperature dependence have been calculated. It is found that the maximum bandwidth of the InGaNAs/GaAs quantum well lasers is about 2.3 times larger than that of the InGaAs/InP quantum well lasers due to the high differential gain which results from the large electron effective mass in the dilute nitride system. The slope efficiency for the 3 dB bandwidth as a function of optical density is twice as large for InGaNAs/GaAs as for InGaAs/InP quantum well lasers.

KW - 3 dB bandwidth

KW - Semiconductor quantum wells

KW - Small signal modulation

UR - https://www.scopus.com/pages/publications/18744384425

U2 - 10.1007/s11082-004-4625-8

DO - 10.1007/s11082-004-4625-8

M3 - Article

AN - SCOPUS:18744384425

SN - 0306-8919

VL - 36

SP - 1147

EP - 1153

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 13

ER -

Small-signal modulation characteristics for 1.5 μm lattice-matched InGaNAs/GaAs and InGaAs/InP quantum well lasers

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this