Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction

Eunpa Kim; Changhyun Ko; Kyunghoon Kim; Yabin Chen; Joonki Suh; Sang Gil Ryu; Kedi Wu; Xiuqing Meng; Aslihan Suslu; Sefaattin Tongay; Junqiao Wu; Costas P. Grigoropoulos

doi:10.1002/adma.201503945

Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction

Eunpa Kim
, Changhyun Ko
, Kyunghoon Kim
, Yabin Chen
, Joonki Suh
, Sang Gil Ryu
, Kedi Wu
, Xiuqing Meng
, Aslihan Suslu
, Sefaattin Tongay
, Junqiao Wu
, Costas P. Grigoropoulos

Department of Mechanical Engineering

University of California at Berkeley
Arizona State University
Zhejiang Normal University
Lawrence Berkeley National Laboratory

Research output: Contribution to journal › Article › peer-review

135 Scopus citations

Abstract

Laser-assisted phosphorus doping is demonstrated on ultrathin transition-metal dichalcogenides (TMDCs) including n-type MoS₂ and p-type WSe₂. Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser-assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.

Original language	English
Pages (from-to)	341-346
Number of pages	6
Journal	Advanced Materials
Volume	28
Issue number	2
DOIs	https://doi.org/10.1002/adma.201503945
State	Published - 13 Jan 2016

Keywords

2D materials
field-effect transistors
laser-assisted doping
site selective
transition metal dichalcogenide

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10.1002/adma.201503945

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title = "Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction",

abstract = "Laser-assisted phosphorus doping is demonstrated on ultrathin transition-metal dichalcogenides (TMDCs) including n-type MoS2 and p-type WSe2. Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser-assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.",

keywords = "2D materials, field-effect transistors, laser-assisted doping, site selective, transition metal dichalcogenide",

author = "Eunpa Kim and Changhyun Ko and Kyunghoon Kim and Yabin Chen and Joonki Suh and Ryu, \{Sang Gil\} and Kedi Wu and Xiuqing Meng and Aslihan Suslu and Sefaattin Tongay and Junqiao Wu and Grigoropoulos, \{Costas P.\}",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2016",

month = jan,

day = "13",

doi = "10.1002/adma.201503945",

language = "English",

volume = "28",

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journal = "Advanced Materials",

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T1 - Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction

AU - Kim, Eunpa

AU - Ko, Changhyun

AU - Kim, Kyunghoon

AU - Chen, Yabin

AU - Suh, Joonki

AU - Ryu, Sang Gil

AU - Wu, Kedi

AU - Meng, Xiuqing

AU - Suslu, Aslihan

AU - Tongay, Sefaattin

AU - Wu, Junqiao

AU - Grigoropoulos, Costas P.

PY - 2016/1/13

Y1 - 2016/1/13

N2 - Laser-assisted phosphorus doping is demonstrated on ultrathin transition-metal dichalcogenides (TMDCs) including n-type MoS2 and p-type WSe2. Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser-assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.

AB - Laser-assisted phosphorus doping is demonstrated on ultrathin transition-metal dichalcogenides (TMDCs) including n-type MoS2 and p-type WSe2. Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser-assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.

KW - 2D materials

KW - field-effect transistors

KW - laser-assisted doping

KW - site selective

KW - transition metal dichalcogenide

UR - https://www.scopus.com/pages/publications/84953872006

U2 - 10.1002/adma.201503945

DO - 10.1002/adma.201503945

M3 - Article

AN - SCOPUS:84953872006

SN - 0935-9648

VL - 28

SP - 341

EP - 346

JO - Advanced Materials

JF - Advanced Materials

IS - 2

ER -

Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction

Abstract

Keywords

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