Single-walled carbon nanotube transistors

Sunkook Kim; Saeed Mohammadi

doi:10.4032/9789814241120

Single-walled carbon nanotube transistors

Sunkook Kim
, Saeed Mohammadi

Purdue University

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

1 Scopus citations

Abstract

We describe approaches taken to address the challenges in making useful and reproducible single-walled carbon nanotube field effect transistors. Both Al2O3 and HfO2 dielectrics for gate insulation have been discussed as are techniques for aligning carbon nanotubes. A variety of measurements, including transistor output characteristics, transfer characteristics and low frequency noise measurements have been described to assess the properties of these devices.

Original language	English
Title of host publication	Nanostructures in Electronics and Photonics
Publisher	Pan Stanford Publishing Pte. Ltd.
Pages	63-82
Number of pages	20
ISBN (Print)	9789814241106
DOIs	https://doi.org/10.4032/9789814241120
State	Published - 1 Apr 2008
Externally published	Yes

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10.4032/9789814241120

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abstract = "We describe approaches taken to address the challenges in making useful and reproducible single-walled carbon nanotube field effect transistors. Both Al2O3 and HfO2 dielectrics for gate insulation have been discussed as are techniques for aligning carbon nanotubes. A variety of measurements, including transistor output characteristics, transfer characteristics and low frequency noise measurements have been described to assess the properties of these devices.",

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AB - We describe approaches taken to address the challenges in making useful and reproducible single-walled carbon nanotube field effect transistors. Both Al2O3 and HfO2 dielectrics for gate insulation have been discussed as are techniques for aligning carbon nanotubes. A variety of measurements, including transistor output characteristics, transfer characteristics and low frequency noise measurements have been described to assess the properties of these devices.

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Single-walled carbon nanotube transistors

Abstract

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