Single-Scan monochromatic photonic capacitance-voltage technique for extraction of subgap dos over the bandgap in amorphous semiconductor tfts

Hagyoul Bae; Hyunjun Choi; Sungwoo Jun; Chunhyung Jo; Yun Hyeok Kim; Jun Seok Hwang; Jaeyeop Ahn; Saeroonter Oh; Jong Uk Bae; Sung Jin Choi; Dae Hwan Kim; Dong Myong Kim

doi:10.1109/LED.2013.2287511

Single-Scan monochromatic photonic capacitance-voltage technique for extraction of subgap dos over the bandgap in amorphous semiconductor tfts

Hagyoul Bae
, Hyunjun Choi
, Sungwoo Jun
, Chunhyung Jo
, Yun Hyeok Kim
, Jun Seok Hwang
, Jaeyeop Ahn
, Saeroonter Oh
, Jong Uk Bae
, Sung Jin Choi
, Dae Hwan Kim
, Dong Myong Kim

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

We report a novel technique for simultaneous extraction of subgap donor- and acceptor-like density of states [gD(E) and gA(E)] over the subgap energy range (E_V<E<E_C) using a single-scan monochromatic photonic capacitance-voltage technique in n-channel amorphous indium-gallium-zinc-oxide thin-film transistors. In the proposed technique, we applied two different equivalent circuit models for the photoresponsive carriers excited from gD(E) and gA(E) under depletion (V_GS<V FB) and accumulation (V GS <V FB) bias by employing a sub-bandgap optical source that includes a relation between photon energy (E ph) and bandgap energy (E _g) as h\nu=Eph<E_g.

Original language	English
Article number	6656862
Pages (from-to)	1524-1526
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	12
DOIs	https://doi.org/10.1109/LED.2013.2287511
State	Published - Dec 2013
Externally published	Yes

Keywords

Acceptor-like states
amorphous
density of states (DOS)
donor-like states
extraction
photonic capacitance
thin-film transistors (TFT)

Access to Document

10.1109/LED.2013.2287511

Cite this

Bae, H., Choi, H., Jun, S., Jo, C., Kim, Y. H., Hwang, J. S., Ahn, J., Oh, S., Bae, J. U., Choi, S. J., Kim, D. H., & Kim, D. M. (2013). Single-Scan monochromatic photonic capacitance-voltage technique for extraction of subgap dos over the bandgap in amorphous semiconductor tfts. IEEE Electron Device Letters, 34(12), 1524-1526. Article 6656862. https://doi.org/10.1109/LED.2013.2287511

@article{838f1df1449c4d54b6eb5e0d5cce298f,

title = "Single-Scan monochromatic photonic capacitance-voltage technique for extraction of subgap dos over the bandgap in amorphous semiconductor tfts",

abstract = "We report a novel technique for simultaneous extraction of subgap donor- and acceptor-like density of states [gD(E) and gA(E)] over the subgap energy range (EVC) using a single-scan monochromatic photonic capacitance-voltage technique in n-channel amorphous indium-gallium-zinc-oxide thin-film transistors. In the proposed technique, we applied two different equivalent circuit models for the photoresponsive carriers excited from gD(E) and gA(E) under depletion (VGSg) as h\textbackslash{}nu=Ephg.",

keywords = "Acceptor-like states, amorphous, density of states (DOS), donor-like states, extraction, photonic capacitance, thin-film transistors (TFT)",

author = "Hagyoul Bae and Hyunjun Choi and Sungwoo Jun and Chunhyung Jo and Kim, \{Yun Hyeok\} and Hwang, \{Jun Seok\} and Jaeyeop Ahn and Saeroonter Oh and Bae, \{Jong Uk\} and Choi, \{Sung Jin\} and Kim, \{Dae Hwan\} and Kim, \{Dong Myong\}",

year = "2013",

month = dec,

doi = "10.1109/LED.2013.2287511",

language = "English",

volume = "34",

pages = "1524--1526",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Single-Scan monochromatic photonic capacitance-voltage technique for extraction of subgap dos over the bandgap in amorphous semiconductor tfts

AU - Bae, Hagyoul

AU - Choi, Hyunjun

AU - Jun, Sungwoo

AU - Jo, Chunhyung

AU - Kim, Yun Hyeok

AU - Hwang, Jun Seok

AU - Ahn, Jaeyeop

AU - Oh, Saeroonter

AU - Bae, Jong Uk

AU - Choi, Sung Jin

AU - Kim, Dae Hwan

AU - Kim, Dong Myong

PY - 2013/12

Y1 - 2013/12

N2 - We report a novel technique for simultaneous extraction of subgap donor- and acceptor-like density of states [gD(E) and gA(E)] over the subgap energy range (EVC) using a single-scan monochromatic photonic capacitance-voltage technique in n-channel amorphous indium-gallium-zinc-oxide thin-film transistors. In the proposed technique, we applied two different equivalent circuit models for the photoresponsive carriers excited from gD(E) and gA(E) under depletion (VGSg) as h\nu=Ephg.

AB - We report a novel technique for simultaneous extraction of subgap donor- and acceptor-like density of states [gD(E) and gA(E)] over the subgap energy range (EVC) using a single-scan monochromatic photonic capacitance-voltage technique in n-channel amorphous indium-gallium-zinc-oxide thin-film transistors. In the proposed technique, we applied two different equivalent circuit models for the photoresponsive carriers excited from gD(E) and gA(E) under depletion (VGSg) as h\nu=Ephg.

KW - Acceptor-like states

KW - amorphous

KW - density of states (DOS)

KW - donor-like states

KW - extraction

KW - photonic capacitance

KW - thin-film transistors (TFT)

UR - https://www.scopus.com/pages/publications/84889661169

U2 - 10.1109/LED.2013.2287511

DO - 10.1109/LED.2013.2287511

M3 - Article

AN - SCOPUS:84889661169

SN - 0741-3106

VL - 34

SP - 1524

EP - 1526

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 6656862

ER -

Single-Scan monochromatic photonic capacitance-voltage technique for extraction of subgap dos over the bandgap in amorphous semiconductor tfts

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this