Simple and fast microwave-enhanced wet etching of SiC particles for electroless Ni-P plating

A simple and fast microwave-enhanced wet chemical etching process of SiC particles has been developed for electroless Ni-P plating, and the etching effects are investigated by using BET surface area analysis, SEM, XPS and XAFS. The results indicate that the microwave etching for only 30 s gives the formation of surface oxide species, which leads to an increase in BET surface area of the SiC sample. The modified SiC surfaces are suitable for the electroless Ni-P plating and the deposit exhibits excellent chemical and mechanical adhesion strength. The etching technique, developed in the present work, will be a very useful tool for the preparation of composite materials between SiC particles and metal matrix.