Silicon surface modification using C4F8 + O2 plasma for nano-imprint lithography

Junmyung Lee; Alexander Efremov; Jaemin Lee; Geun Young Yeom; Kwang Ho Kwon

doi:10.1166/jnn.2015.11511

Silicon surface modification using C₄F₈ + O₂ plasma for nano-imprint lithography

Junmyung Lee
, Alexander Efremov
, Jaemin Lee
, Geun Young Yeom
, Kwang Ho Kwon

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The investigation of C₄F₈ + O₂ feed gas composition on both plasma parameters and plasma treated silicon surface characteristics was carried out. The combination of plasma diagnostics by Langmuir probes and plasma modeling indicated that an increase in O₂ mixing ratio results in monotonically decreasing densities of CF_x (x = 1-3) radicals as well as in non-monotonic behavior of F atom density. The surface characterization by X-ray photoelectron spectroscopy and contact angle measurements showed that the C₄F₈ + O₂ mixtures with less than 60% O₂ result in modification of Si surfaces due to the deposition of the FC polymer films while the change of O₂ mixing ratio in the range of 30%-60% provides an effective adjustment of the surface characteristics such as surface energy contact angle, etc.

Original language	English
Pages (from-to)	8749-8755
Number of pages	7
Journal	Journal of Nanoscience and Nanotechnology
Volume	15
Issue number	11
DOIs	https://doi.org/10.1166/jnn.2015.11511
State	Published - 1 Nov 2015

Keywords

CF plasma
Fluorocarbon polymer
Surface modification
Treatment

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10.1166/jnn.2015.11511

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title = "Silicon surface modification using C4F8 + O2 plasma for nano-imprint lithography",

abstract = "The investigation of C4F8 + O2 feed gas composition on both plasma parameters and plasma treated silicon surface characteristics was carried out. The combination of plasma diagnostics by Langmuir probes and plasma modeling indicated that an increase in O2 mixing ratio results in monotonically decreasing densities of CFx (x = 1-3) radicals as well as in non-monotonic behavior of F atom density. The surface characterization by X-ray photoelectron spectroscopy and contact angle measurements showed that the C4F8 + O2 mixtures with less than 60\% O2 result in modification of Si surfaces due to the deposition of the FC polymer films while the change of O2 mixing ratio in the range of 30\%-60\% provides an effective adjustment of the surface characteristics such as surface energy contact angle, etc.",

keywords = "CF plasma, Fluorocarbon polymer, Surface modification, Treatment",

author = "Junmyung Lee and Alexander Efremov and Jaemin Lee and Yeom, \{Geun Young\} and Kwon, \{Kwang Ho\}",

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doi = "10.1166/jnn.2015.11511",

language = "English",

volume = "15",

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journal = "Journal of Nanoscience and Nanotechnology",

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TY - JOUR

T1 - Silicon surface modification using C4F8 + O2 plasma for nano-imprint lithography

AU - Lee, Junmyung

AU - Efremov, Alexander

AU - Lee, Jaemin

AU - Yeom, Geun Young

AU - Kwon, Kwang Ho

PY - 2015/11/1

Y1 - 2015/11/1

N2 - The investigation of C4F8 + O2 feed gas composition on both plasma parameters and plasma treated silicon surface characteristics was carried out. The combination of plasma diagnostics by Langmuir probes and plasma modeling indicated that an increase in O2 mixing ratio results in monotonically decreasing densities of CFx (x = 1-3) radicals as well as in non-monotonic behavior of F atom density. The surface characterization by X-ray photoelectron spectroscopy and contact angle measurements showed that the C4F8 + O2 mixtures with less than 60% O2 result in modification of Si surfaces due to the deposition of the FC polymer films while the change of O2 mixing ratio in the range of 30%-60% provides an effective adjustment of the surface characteristics such as surface energy contact angle, etc.

AB - The investigation of C4F8 + O2 feed gas composition on both plasma parameters and plasma treated silicon surface characteristics was carried out. The combination of plasma diagnostics by Langmuir probes and plasma modeling indicated that an increase in O2 mixing ratio results in monotonically decreasing densities of CFx (x = 1-3) radicals as well as in non-monotonic behavior of F atom density. The surface characterization by X-ray photoelectron spectroscopy and contact angle measurements showed that the C4F8 + O2 mixtures with less than 60% O2 result in modification of Si surfaces due to the deposition of the FC polymer films while the change of O2 mixing ratio in the range of 30%-60% provides an effective adjustment of the surface characteristics such as surface energy contact angle, etc.

KW - CF plasma

KW - Fluorocarbon polymer

KW - Surface modification

KW - Treatment

UR - https://www.scopus.com/pages/publications/84944714536

U2 - 10.1166/jnn.2015.11511

DO - 10.1166/jnn.2015.11511

M3 - Article

AN - SCOPUS:84944714536

SN - 1533-4880

VL - 15

SP - 8749

EP - 8755

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 11

ER -

Silicon surface modification using C₄F₈ + O₂ plasma for nano-imprint lithography

Abstract

Keywords

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