Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas

E. S. Kannan; Gil Ho Kim; Sanjeev Kumar; I. Farrer; D. A. Ritchie; Jun Ho Son; Jeong Min Baik; Jong Lam Lee; D. H. Youn; Kwang Yong Kang

doi:10.1063/1.2720704

Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas

E. S. Kannan, Gil Ho Kim, Sanjeev Kumar, I. Farrer, D. A. Ritchie, Jun Ho Son, Jeong Min Baik, Jong Lam Lee, D. H. Youn, Kwang Yong Kang

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Short range interaction between two dimensional electron gas (2DEG) and InAs quantum dots embedded in the GaAs/AlGaAs quantum well is investigated as a function of carrier density. At low carrier density the interaction is significantly characterized by a transport to quantum lifetime ratio of less than 5. However, with an increase in carrier density, quantum lifetime is observed to undergo a sharp transition from 0.17 to 0.25 ps. This is attributed to the screening of short range repulsive scattering due to InAs quantum dots by the 2DEG.

Original language	English
Article number	152110
Journal	Applied Physics Letters
Volume	90
Issue number	15
DOIs	https://doi.org/10.1063/1.2720704
State	Published - 2007

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title = "Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas",

abstract = "Short range interaction between two dimensional electron gas (2DEG) and InAs quantum dots embedded in the GaAs/AlGaAs quantum well is investigated as a function of carrier density. At low carrier density the interaction is significantly characterized by a transport to quantum lifetime ratio of less than 5. However, with an increase in carrier density, quantum lifetime is observed to undergo a sharp transition from 0.17 to 0.25 ps. This is attributed to the screening of short range repulsive scattering due to InAs quantum dots by the 2DEG.",

author = "Kannan, \{E. S.\} and Kim, \{Gil Ho\} and Sanjeev Kumar and I. Farrer and Ritchie, \{D. A.\} and Son, \{Jun Ho\} and Baik, \{Jeong Min\} and Lee, \{Jong Lam\} and Youn, \{D. H.\} and Kang, \{Kwang Yong\}",

year = "2007",

doi = "10.1063/1.2720704",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas

AU - Kannan, E. S.

AU - Kim, Gil Ho

AU - Kumar, Sanjeev

AU - Farrer, I.

AU - Ritchie, D. A.

AU - Son, Jun Ho

AU - Baik, Jeong Min

AU - Lee, Jong Lam

AU - Youn, D. H.

AU - Kang, Kwang Yong

PY - 2007

Y1 - 2007

N2 - Short range interaction between two dimensional electron gas (2DEG) and InAs quantum dots embedded in the GaAs/AlGaAs quantum well is investigated as a function of carrier density. At low carrier density the interaction is significantly characterized by a transport to quantum lifetime ratio of less than 5. However, with an increase in carrier density, quantum lifetime is observed to undergo a sharp transition from 0.17 to 0.25 ps. This is attributed to the screening of short range repulsive scattering due to InAs quantum dots by the 2DEG.

AB - Short range interaction between two dimensional electron gas (2DEG) and InAs quantum dots embedded in the GaAs/AlGaAs quantum well is investigated as a function of carrier density. At low carrier density the interaction is significantly characterized by a transport to quantum lifetime ratio of less than 5. However, with an increase in carrier density, quantum lifetime is observed to undergo a sharp transition from 0.17 to 0.25 ps. This is attributed to the screening of short range repulsive scattering due to InAs quantum dots by the 2DEG.

UR - https://www.scopus.com/pages/publications/34247247837

U2 - 10.1063/1.2720704

DO - 10.1063/1.2720704

M3 - Article

AN - SCOPUS:34247247837

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152110

ER -

Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas

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