Short channels and mobility control of GAA multi stacked nanosheets through the perfect removal of SiGe and post treatment

D. I. Bae; B. D. Choi

doi:10.1049/el.2019.3459

Short channels and mobility control of GAA multi stacked nanosheets through the perfect removal of SiGe and post treatment

D. I. Bae, B. D. Choi

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

As the most feasible alternative to FinFETs, gate-all-around (GAA) multi-stacked nanosheets known as multi bridge channel FETs were recently introduced. To enjoy improved short channel control with high mobility and GAA characteristics, two critical processing challenges on channels should be overcome: The epitaxial growth of silicon/silicon germanium (Si/SiGe) multi stacks and the clean removal of SiGe. Si surface engineering after SiGe removal is a particularly crucial process. Various methods for removing the sacrificial SiGe layer to form nanosheets were tested in this Letter. Through the measurement of Dit and a flat band voltage (Vfb) shift, a remaining sacrificial SiGe layer was detected. After clean removal of the sacrificial SiGe layer and post cleaning, a Dit of 5 × 10¹¹ cm^-2 was achieved, which was similar to that achieved without the removal of SiGe.

Original language	English
Pages (from-to)	400-402
Number of pages	3
Journal	Electronics Letters
Volume	56
Issue number	8
DOIs	https://doi.org/10.1049/el.2019.3459
State	Published - 16 Apr 2020
Externally published	Yes

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title = "Short channels and mobility control of GAA multi stacked nanosheets through the perfect removal of SiGe and post treatment",

abstract = "As the most feasible alternative to FinFETs, gate-all-around (GAA) multi-stacked nanosheets known as multi bridge channel FETs were recently introduced. To enjoy improved short channel control with high mobility and GAA characteristics, two critical processing challenges on channels should be overcome: The epitaxial growth of silicon/silicon germanium (Si/SiGe) multi stacks and the clean removal of SiGe. Si surface engineering after SiGe removal is a particularly crucial process. Various methods for removing the sacrificial SiGe layer to form nanosheets were tested in this Letter. Through the measurement of Dit and a flat band voltage (Vfb) shift, a remaining sacrificial SiGe layer was detected. After clean removal of the sacrificial SiGe layer and post cleaning, a Dit of 5 × 1011 cm-2 was achieved, which was similar to that achieved without the removal of SiGe.",

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T1 - Short channels and mobility control of GAA multi stacked nanosheets through the perfect removal of SiGe and post treatment

AU - Bae, D. I.

AU - Choi, B. D.

N1 - Publisher Copyright: © The Institution of Engineering and Technology 2020.

PY - 2020/4/16

Y1 - 2020/4/16

N2 - As the most feasible alternative to FinFETs, gate-all-around (GAA) multi-stacked nanosheets known as multi bridge channel FETs were recently introduced. To enjoy improved short channel control with high mobility and GAA characteristics, two critical processing challenges on channels should be overcome: The epitaxial growth of silicon/silicon germanium (Si/SiGe) multi stacks and the clean removal of SiGe. Si surface engineering after SiGe removal is a particularly crucial process. Various methods for removing the sacrificial SiGe layer to form nanosheets were tested in this Letter. Through the measurement of Dit and a flat band voltage (Vfb) shift, a remaining sacrificial SiGe layer was detected. After clean removal of the sacrificial SiGe layer and post cleaning, a Dit of 5 × 1011 cm-2 was achieved, which was similar to that achieved without the removal of SiGe.

AB - As the most feasible alternative to FinFETs, gate-all-around (GAA) multi-stacked nanosheets known as multi bridge channel FETs were recently introduced. To enjoy improved short channel control with high mobility and GAA characteristics, two critical processing challenges on channels should be overcome: The epitaxial growth of silicon/silicon germanium (Si/SiGe) multi stacks and the clean removal of SiGe. Si surface engineering after SiGe removal is a particularly crucial process. Various methods for removing the sacrificial SiGe layer to form nanosheets were tested in this Letter. Through the measurement of Dit and a flat band voltage (Vfb) shift, a remaining sacrificial SiGe layer was detected. After clean removal of the sacrificial SiGe layer and post cleaning, a Dit of 5 × 1011 cm-2 was achieved, which was similar to that achieved without the removal of SiGe.

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DO - 10.1049/el.2019.3459

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JO - Electronics Letters

JF - Electronics Letters

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Short channels and mobility control of GAA multi stacked nanosheets through the perfect removal of SiGe and post treatment

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