Separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime

D. S. Byeon; J. H. Chun; B. H. Lee; D. Y. Kim; M. K. Han; Y. I. Choi

doi:10.1016/S0026-2692(98)00180-3

Separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime

D. S. Byeon
, J. H. Chun
, B. H. Lee
, D. Y. Kim
, M. K. Han
, Y. I. Choi

Research output: Contribution to journal › Conference article › peer-review

15 Scopus citations

Abstract

The separated shorted-anode LIGBT (SSA-LIGBT), which suppresses effectively the negative differential resistance regime, is investigated by performing 2-dimensional numerical simulation. In order to suppress the negative differential resistance regime, the SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path instead of the lowly resistive n buffer region of the conventional SA-LIGBT. The SSA-LIGBT shows the remarkably decreased forward voltage drop when compared with the conventional SA-LIGBT and shows the one-order faster turn-off time than that of the LIGBT.

Original language	English
Pages (from-to)	571-575
Number of pages	5
Journal	Microelectronics Journal
Volume	30
Issue number	6
DOIs	https://doi.org/10.1016/S0026-2692(98)00180-3
State	Published - Jun 1999
Externally published	Yes

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10.1016/S0026-2692(98)00180-3

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@article{ebc3139a9e9e4753a7a2950cb4f54a49,

title = "Separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime",

abstract = "The separated shorted-anode LIGBT (SSA-LIGBT), which suppresses effectively the negative differential resistance regime, is investigated by performing 2-dimensional numerical simulation. In order to suppress the negative differential resistance regime, the SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path instead of the lowly resistive n buffer region of the conventional SA-LIGBT. The SSA-LIGBT shows the remarkably decreased forward voltage drop when compared with the conventional SA-LIGBT and shows the one-order faster turn-off time than that of the LIGBT.",

author = "Byeon, \{D. S.\} and Chun, \{J. H.\} and Lee, \{B. H.\} and Kim, \{D. Y.\} and Han, \{M. K.\} and Choi, \{Y. I.\}",

year = "1999",

month = jun,

doi = "10.1016/S0026-2692(98)00180-3",

language = "English",

volume = "30",

pages = "571--575",

journal = "Microelectronics Journal",

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publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime

AU - Byeon, D. S.

AU - Chun, J. H.

AU - Lee, B. H.

AU - Kim, D. Y.

AU - Han, M. K.

AU - Choi, Y. I.

PY - 1999/6

Y1 - 1999/6

N2 - The separated shorted-anode LIGBT (SSA-LIGBT), which suppresses effectively the negative differential resistance regime, is investigated by performing 2-dimensional numerical simulation. In order to suppress the negative differential resistance regime, the SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path instead of the lowly resistive n buffer region of the conventional SA-LIGBT. The SSA-LIGBT shows the remarkably decreased forward voltage drop when compared with the conventional SA-LIGBT and shows the one-order faster turn-off time than that of the LIGBT.

AB - The separated shorted-anode LIGBT (SSA-LIGBT), which suppresses effectively the negative differential resistance regime, is investigated by performing 2-dimensional numerical simulation. In order to suppress the negative differential resistance regime, the SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path instead of the lowly resistive n buffer region of the conventional SA-LIGBT. The SSA-LIGBT shows the remarkably decreased forward voltage drop when compared with the conventional SA-LIGBT and shows the one-order faster turn-off time than that of the LIGBT.

UR - https://www.scopus.com/pages/publications/0032687731

U2 - 10.1016/S0026-2692(98)00180-3

DO - 10.1016/S0026-2692(98)00180-3

M3 - Conference article

AN - SCOPUS:0032687731

SN - 0026-2692

VL - 30

SP - 571

EP - 575

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 6

ER -

Separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime

Abstract

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