Abstract
A simple and effective process of preparing ultra-thin zeolite films on a silicon substrate is described. The starting material was a stable colloidal dispersion of TS-1 zeolite particles with a size of 50-100 nm. The silicon wafer is placed in a 20 mM solution of hexanoic acid in water at pH = 3. When the colloidal dispersion is added, the adsorption of the hexanoic acid molecules onto the zeolite particles causes them to deposit on the silicon wafer to form a thin layer with a thickness of about 103 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 355-356 |
| Number of pages | 2 |
| Journal | Chemistry Letters |
| Issue number | 4 |
| DOIs | |
| State | Published - 1998 |
| Externally published | Yes |