Selective deposition of metal oxide thin films on Si(100) surfaces by combination of metal-organic chemical vapour deposition and microcontact printing methods

TiO₂, ZrO₂ and HfO₂ thin films have been deposited selectively using metal-organic chemical vapour deposition (MOCVD) technique with various single molecular precursors on Si(100) substrates which were patterned with octadecyltrichlorosilane (OTS) applied by microcontact printing (μ CP). Titanium (IV) isopropoxide [Ti(OⁱPr) ₄], bis-isopropoxy-bis-tertiarybutyl- acetoacetate zirconium [Zr(Oⁱ Pr)₂ (tbaoac)₂ ] and hafnium tert-butoxide [Hf(O^tBu)₄ ] were used for titanium dioxide (TiO₂), hafnium and zirconium oxide (ZrO₂ and HfO ₂) thin films, respectively. Selective depositions were successfully carried out in a home-made MOCVD system. All the deposited thin films had higher reactivity on bare silicon surfaces than OTS self-assembled monolayers (SAMs) deposited area. However, there was slightly different selective growth tendency on OTS deposited Si(100) surfaces. The selectivity tendency of the deposited thin films was revealed in order of TiO₂, HfO₂ and ZrO₂. This tendency was explained by means of film growth rate, structures and molecular weight of precursors and acidity of transition metal of precursors.