Selective-area high-quality germanium growth for monolithic integrated optoelectronics

Engineering

• Integrated Optoelectronics 100%
• VLSI Circuits 100%
• Atomic Force Microscope 50%
• Optoelectronics 50%
• Integrated Circuit 50%
• Silicon Substrate 50%
• Root Mean Square 50%
• Defect Density 50%
• Dislocation Density 50%
• Photodiode 50%
• Threading Dislocation 50%
• Dependent Growth 50%
• Plan View 50%

Material Science

• Germanium 100%
• Silicon 57%
• Surface Roughness 28%
• Density 14%
• Annealing 14%
• Defect Density 14%