@inproceedings{46f27c91ddcb4b8d8979709aa7d941a9,
title = "Schottky source/drain transistor on thin SiGe on insulator integrated with HfO2/TaN gate stack",
abstract = "We report thin SGOI (Silicon Germanium on Insulator) with 65\% Ge concentration p-MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor) using Ni-germanosilicide Schottky S/D (source/drain) and HfO2/TaN gate stack integrated with conventional self-aligned top gate process. Unlike high temperature S/D activation needed for conventional transistor, low Ni-germanosilicide S/D formation temperature contributes to the excellent capacitance-voltage characteristic, low gate leakage current and hence, well-behaved transistor performance. In addition, SOI structure suppresses the junction leakage problem, resulting in good agreement between the source current and drain current of the MOSFET.",
author = "Fei Gao and Lee, \{S. J.\} and Rui Li and S. Balakumar and Tung, \{Chih Hang\} and Chi, \{Dong Zhi\} and Kwong, \{Dim Lee\}",
year = "2006",
doi = "10.1557/proc-0913-d01-04",
language = "English",
isbn = "1558998691",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "19--25",
booktitle = "Transistor Scaling-Methods, Materials and Modeling",
address = "United States",
note = "2006 MRS Spring Meeting ; Conference date: 18-04-2006 Through 19-04-2006",
}