Schottky barrier engineering in carbon nanotube with various metal electrodes

David Perello; Moon J. Kim; Dong Kyu Cha; Gang Hee Han; Dong Jae Bae; Seung Yol Jeong; Young Hee Lee; Minhee Yun

doi:10.1109/NANO.2007.4601168

Schottky barrier engineering in carbon nanotube with various metal electrodes

David Perello
, Moon J. Kim
, Dong Kyu Cha
, Gang Hee Han
, Dong Jae Bae
, Seung Yol Jeong
, Young Hee Lee
, Minhee Yun

Department of Physics

University of Pittsburgh
University of Texas at Dallas
Sungkyunkwan University
IEEE

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

We investigated carbon nanotube field effect transistors (CNT FET) utilizing semiconducting single-walled carbon nanotubes (SWCNTs). Multiple devices, each of different metal source and drain contacts, were fabricated on long (∼ micron) SWCNT. Large contact resistances around four MΩ were observed at room temperature. Low termperature measurements yielded varying contact resistances for these same devices. Transport properties of the devices follow to the Schottky contact and Poole-Frenkel model with measured 25 - 41 meV barriers for the devices.

Original language	English
Title of host publication	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages	189-193
Number of pages	5
DOIs	https://doi.org/10.1109/NANO.2007.4601168
State	Published - 2007
Event	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China Duration: 2 Aug 2007 → 5 Aug 2007

Publication series

Name	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Conference

Conference	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
Country/Territory	China
City	Hong Kong
Period	2/08/07 → 5/08/07

Keywords

Carbon nanotubes
Nano architecture
Nanufacturing

Access to Document

10.1109/NANO.2007.4601168

Cite this

Perello, D., Kim, M. J., Cha, D. K., Han, G. H., Bae, D. J., Jeong, S. Y., Lee, Y. H., & Yun, M. (2007). Schottky barrier engineering in carbon nanotube with various metal electrodes. In 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings (pp. 189-193). Article 4601168 (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings). https://doi.org/10.1109/NANO.2007.4601168

@inproceedings{4d7c993750964356a1a2e3ad229203e5,

title = "Schottky barrier engineering in carbon nanotube with various metal electrodes",

abstract = "We investigated carbon nanotube field effect transistors (CNT FET) utilizing semiconducting single-walled carbon nanotubes (SWCNTs). Multiple devices, each of different metal source and drain contacts, were fabricated on long (∼ micron) SWCNT. Large contact resistances around four MΩ were observed at room temperature. Low termperature measurements yielded varying contact resistances for these same devices. Transport properties of the devices follow to the Schottky contact and Poole-Frenkel model with measured 25 - 41 meV barriers for the devices.",

keywords = "Carbon nanotubes, Nano architecture, Nanufacturing",

author = "David Perello and Kim, \{Moon J.\} and Cha, \{Dong Kyu\} and Han, \{Gang Hee\} and Bae, \{Dong Jae\} and Jeong, \{Seung Yol\} and Lee, \{Young Hee\} and Minhee Yun",

year = "2007",

doi = "10.1109/NANO.2007.4601168",

language = "English",

isbn = "1424406080",

series = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings",

pages = "189--193",

booktitle = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings",

note = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 ; Conference date: 02-08-2007 Through 05-08-2007",

}

Perello, D, Kim, MJ, Cha, DK, Han, GH, Bae, DJ, Jeong, SY, Lee, YH & Yun, M 2007, Schottky barrier engineering in carbon nanotube with various metal electrodes. in 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings., 4601168, 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings, pp. 189-193, 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Hong Kong, China, 2/08/07. https://doi.org/10.1109/NANO.2007.4601168

Schottky barrier engineering in carbon nanotube with various metal electrodes. / Perello, David; Kim, Moon J.; Cha, Dong Kyu et al.
2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings. 2007. p. 189-193 4601168 (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Schottky barrier engineering in carbon nanotube with various metal electrodes

AU - Perello, David

AU - Kim, Moon J.

AU - Cha, Dong Kyu

AU - Han, Gang Hee

AU - Bae, Dong Jae

AU - Jeong, Seung Yol

AU - Lee, Young Hee

AU - Yun, Minhee

PY - 2007

Y1 - 2007

N2 - We investigated carbon nanotube field effect transistors (CNT FET) utilizing semiconducting single-walled carbon nanotubes (SWCNTs). Multiple devices, each of different metal source and drain contacts, were fabricated on long (∼ micron) SWCNT. Large contact resistances around four MΩ were observed at room temperature. Low termperature measurements yielded varying contact resistances for these same devices. Transport properties of the devices follow to the Schottky contact and Poole-Frenkel model with measured 25 - 41 meV barriers for the devices.

AB - We investigated carbon nanotube field effect transistors (CNT FET) utilizing semiconducting single-walled carbon nanotubes (SWCNTs). Multiple devices, each of different metal source and drain contacts, were fabricated on long (∼ micron) SWCNT. Large contact resistances around four MΩ were observed at room temperature. Low termperature measurements yielded varying contact resistances for these same devices. Transport properties of the devices follow to the Schottky contact and Poole-Frenkel model with measured 25 - 41 meV barriers for the devices.

KW - Carbon nanotubes

KW - Nano architecture

KW - Nanufacturing

UR - https://www.scopus.com/pages/publications/52949121453

U2 - 10.1109/NANO.2007.4601168

DO - 10.1109/NANO.2007.4601168

M3 - Conference contribution

AN - SCOPUS:52949121453

SN - 1424406080

SN - 9781424406081

T3 - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

SP - 189

EP - 193

BT - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

T2 - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007

Y2 - 2 August 2007 through 5 August 2007

ER -

Perello D, Kim MJ, Cha DK, Han GH, Bae DJ, Jeong SY et al. Schottky barrier engineering in carbon nanotube with various metal electrodes. In 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings. 2007. p. 189-193. 4601168. (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings). doi: 10.1109/NANO.2007.4601168

Schottky barrier engineering in carbon nanotube with various metal electrodes

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