TY - GEN
T1 - Scanning tunneling microscopy of quantum confinement effects in lead sulfide thin films
AU - Lee, Wonyoung
AU - Dasgupta, Neil P.
AU - Prinz, Fritz B.
PY - 2009
Y1 - 2009
N2 - We report the use of the scanning tunneling spectroscopy (STS) to investigate 1-dimensional quantum confinement effects in lead sulfide (PbS) thin films. The band gap was varied by control of the PbS film thickness and barrier materials. PbS quantum well structures with a thickness range of 1-20 nm were prepared by atomic layer deposition (ALD) due to its unique characteristics: precise thickness control with sub-nm resolution, pinhole-free films, and conformal coating. Two barrier materials were selected based on their barrier height: silicon dioxide as a high barrier material and zinc sulfide as a low barrier material. PbS quantum wells embedded in different barrier materials were characterized with STS to measure band gap variations. Experimental results showed that the band gap of PbS thin films increased as film thickness decreased and barrier height increased. The experimental results showed good agreement with an effective mass model.
AB - We report the use of the scanning tunneling spectroscopy (STS) to investigate 1-dimensional quantum confinement effects in lead sulfide (PbS) thin films. The band gap was varied by control of the PbS film thickness and barrier materials. PbS quantum well structures with a thickness range of 1-20 nm were prepared by atomic layer deposition (ALD) due to its unique characteristics: precise thickness control with sub-nm resolution, pinhole-free films, and conformal coating. Two barrier materials were selected based on their barrier height: silicon dioxide as a high barrier material and zinc sulfide as a low barrier material. PbS quantum wells embedded in different barrier materials were characterized with STS to measure band gap variations. Experimental results showed that the band gap of PbS thin films increased as film thickness decreased and barrier height increased. The experimental results showed good agreement with an effective mass model.
UR - https://www.scopus.com/pages/publications/77951556149
U2 - 10.1109/PVSC.2009.5411631
DO - 10.1109/PVSC.2009.5411631
M3 - Conference contribution
AN - SCOPUS:77951556149
SN - 9781424429509
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 527
EP - 529
BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Y2 - 7 June 2009 through 12 June 2009
ER -