Scanning probe based observation of bipolar resistive switching NiO films

Min Hwan Lee; Seul Ji Song; Kyung Min Kim; Gun Hwan Kim; Jun Yeong Seok; Jung Ho Yoon; Cheol Seong Hwang

doi:10.1063/1.3479526

Scanning probe based observation of bipolar resistive switching NiO films

Min Hwan Lee, Seul Ji Song, Kyung Min Kim, Gun Hwan Kim, Jun Yeong Seok, Jung Ho Yoon, Cheol Seong Hwang

Seoul National University

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

The switching mechanism of the bipolar resistive switching behavior on NiO films was examined using local probe based measurements. Unlike the unipolar switching normally observed on a metal-insulator-metal structure, repetitive bipolar switching was observed on NiO films when a local probe was used as the top electrode. Surface potential and current maps obtained after the anodic/cathodic bias application through the scanning probe both in air and under high vacuum suggested that the resistive switching is caused mainly by the electrochemical redox reaction at the electrode-film interface rather than by charge drift within the NiO film.

Original language	English
Article number	062909
Journal	Applied Physics Letters
Volume	97
Issue number	6
DOIs	https://doi.org/10.1063/1.3479526
State	Published - 9 Aug 2010
Externally published	Yes

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10.1063/1.3479526

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title = "Scanning probe based observation of bipolar resistive switching NiO films",

abstract = "The switching mechanism of the bipolar resistive switching behavior on NiO films was examined using local probe based measurements. Unlike the unipolar switching normally observed on a metal-insulator-metal structure, repetitive bipolar switching was observed on NiO films when a local probe was used as the top electrode. Surface potential and current maps obtained after the anodic/cathodic bias application through the scanning probe both in air and under high vacuum suggested that the resistive switching is caused mainly by the electrochemical redox reaction at the electrode-film interface rather than by charge drift within the NiO film.",

author = "Lee, \{Min Hwan\} and Song, \{Seul Ji\} and Kim, \{Kyung Min\} and Kim, \{Gun Hwan\} and Seok, \{Jun Yeong\} and Yoon, \{Jung Ho\} and Hwang, \{Cheol Seong\}",

year = "2010",

month = aug,

day = "9",

doi = "10.1063/1.3479526",

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journal = "Applied Physics Letters",

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T1 - Scanning probe based observation of bipolar resistive switching NiO films

AU - Lee, Min Hwan

AU - Song, Seul Ji

AU - Kim, Kyung Min

AU - Kim, Gun Hwan

AU - Seok, Jun Yeong

AU - Yoon, Jung Ho

AU - Hwang, Cheol Seong

PY - 2010/8/9

Y1 - 2010/8/9

N2 - The switching mechanism of the bipolar resistive switching behavior on NiO films was examined using local probe based measurements. Unlike the unipolar switching normally observed on a metal-insulator-metal structure, repetitive bipolar switching was observed on NiO films when a local probe was used as the top electrode. Surface potential and current maps obtained after the anodic/cathodic bias application through the scanning probe both in air and under high vacuum suggested that the resistive switching is caused mainly by the electrochemical redox reaction at the electrode-film interface rather than by charge drift within the NiO film.

AB - The switching mechanism of the bipolar resistive switching behavior on NiO films was examined using local probe based measurements. Unlike the unipolar switching normally observed on a metal-insulator-metal structure, repetitive bipolar switching was observed on NiO films when a local probe was used as the top electrode. Surface potential and current maps obtained after the anodic/cathodic bias application through the scanning probe both in air and under high vacuum suggested that the resistive switching is caused mainly by the electrochemical redox reaction at the electrode-film interface rather than by charge drift within the NiO film.

UR - https://www.scopus.com/pages/publications/77955744489

U2 - 10.1063/1.3479526

DO - 10.1063/1.3479526

M3 - Article

AN - SCOPUS:77955744489

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062909

ER -

Scanning probe based observation of bipolar resistive switching NiO films

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