Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme

Si Hyun Park; Jaehoon Kim; Heonsu Jeon; Tan Sakong; Sung Nam Lee; Suhee Chae; Y. Park; Chang Hyun Jeong; Geun Young Yeom; Yong Hoon Cho

doi:10.1063/1.1611643

Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme

Si Hyun Park
, Jaehoon Kim
, Heonsu Jeon
, Tan Sakong
, Sung Nam Lee
, Suhee Chae
, Y. Park
, Chang Hyun Jeong
, Geun Young Yeom
, Yong Hoon Cho

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

90 Scopus citations

Abstract

A GaN-based vertical-cavity surface-emitting laser (VCSEL) was demonstrated in an extended cavity structure. High-reflection dielectric mirrors were deposited on both sides of the laser cavity. It was observed that the VCSEL device lased at a low threshold excitation intensity of 160 kW/cm ₂.

Original language	English
Pages (from-to)	2121-2123
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	11
DOIs	https://doi.org/10.1063/1.1611643
State	Published - 15 Sep 2003

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title = "Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme",

abstract = "A GaN-based vertical-cavity surface-emitting laser (VCSEL) was demonstrated in an extended cavity structure. High-reflection dielectric mirrors were deposited on both sides of the laser cavity. It was observed that the VCSEL device lased at a low threshold excitation intensity of 160 kW/cm 2.",

author = "Park, \{Si Hyun\} and Jaehoon Kim and Heonsu Jeon and Tan Sakong and Lee, \{Sung Nam\} and Suhee Chae and Y. Park and Jeong, \{Chang Hyun\} and Yeom, \{Geun Young\} and Cho, \{Yong Hoon\}",

year = "2003",

month = sep,

day = "15",

doi = "10.1063/1.1611643",

language = "English",

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pages = "2121--2123",

journal = "Applied Physics Letters",

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T1 - Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme

AU - Park, Si Hyun

AU - Kim, Jaehoon

AU - Jeon, Heonsu

AU - Sakong, Tan

AU - Lee, Sung Nam

AU - Chae, Suhee

AU - Park, Y.

AU - Jeong, Chang Hyun

AU - Yeom, Geun Young

AU - Cho, Yong Hoon

PY - 2003/9/15

Y1 - 2003/9/15

N2 - A GaN-based vertical-cavity surface-emitting laser (VCSEL) was demonstrated in an extended cavity structure. High-reflection dielectric mirrors were deposited on both sides of the laser cavity. It was observed that the VCSEL device lased at a low threshold excitation intensity of 160 kW/cm 2.

AB - A GaN-based vertical-cavity surface-emitting laser (VCSEL) was demonstrated in an extended cavity structure. High-reflection dielectric mirrors were deposited on both sides of the laser cavity. It was observed that the VCSEL device lased at a low threshold excitation intensity of 160 kW/cm 2.

UR - https://www.scopus.com/pages/publications/0142090004

U2 - 10.1063/1.1611643

DO - 10.1063/1.1611643

M3 - Article

AN - SCOPUS:0142090004

SN - 0003-6951

VL - 83

SP - 2121

EP - 2123

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme

Abstract

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