Room temperature ferromagnetism of Co doped TiO2 using ion implantation and defect engineering

J. K. Lee; H. S. Jung; J. A. Valdez; M. F. Hundley; J. D. Thompson; K. E. Sickafus; M. Nastasi; D. W. Hamby; D. A. Lucca

doi:10.1016/j.nimb.2006.04.171

Room temperature ferromagnetism of Co doped TiO₂ using ion implantation and defect engineering

J. K. Lee
, H. S. Jung
, J. A. Valdez
, M. F. Hundley
, J. D. Thompson
, K. E. Sickafus
, M. Nastasi
, D. W. Hamby
, D. A. Lucca

Los Alamos National Laboratory Materials Science and Technology Division
Oklahoma State University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Ferromagnetic (FM) semiconductors obtained by doping ferromagnetic elements into a nonmagnetic semiconductor matrix are essential for the second generation of spintronics devices. In this study, we investigate Co doping behavior and subsequent magnetic properties in Co implanted and thermally annealed TiO₂. In TiO₂ single crystals, a decrease in the oxygen partial pressure during thermal annealing is found to enhance the Co substitutional fraction by increasing the concentration of oxygen vacancies. Magnetic properties determined from superconducting quantum interference device magnetometer (SQUID) measurements show that TiO₂ crystals with a large fraction of substitutional Co are ferromagnetic at room temperature. In addition to single crystals, the feasibility of Co doping via ion implantation is studied in sol-gel synthesized TiO₂ thin films. Results from grazing incidence X-ray diffraction (GIXRD) show that the implantation can produce Co doped TiO₂ thin films and that the Co incorporation into Ti lattice site accompanies the transition from rutile to anatase phase. These results show that ion beam synthesis is a useful tool for producing ferromagnetic TiO₂ with a high Curie temperature (T_C).

Original language	English
Pages (from-to)	279-282
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	250
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nimb.2006.04.171
State	Published - Sep 2006
Externally published	Yes

Keywords

Ferromagnetic semiconductor
Ion implantation
TiO

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10.1016/j.nimb.2006.04.171

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Lee, J. K., Jung, H. S., Valdez, J. A., Hundley, M. F., Thompson, J. D., Sickafus, K. E., Nastasi, M., Hamby, D. W., & Lucca, D. A. (2006). Room temperature ferromagnetism of Co doped TiO₂ using ion implantation and defect engineering. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 250(1-2 SPEC. ISS.), 279-282. https://doi.org/10.1016/j.nimb.2006.04.171

@article{ae848ecf2c5d4b409445e62f0bdbde25,

title = "Room temperature ferromagnetism of Co doped TiO2 using ion implantation and defect engineering",

abstract = "Ferromagnetic (FM) semiconductors obtained by doping ferromagnetic elements into a nonmagnetic semiconductor matrix are essential for the second generation of spintronics devices. In this study, we investigate Co doping behavior and subsequent magnetic properties in Co implanted and thermally annealed TiO2. In TiO2 single crystals, a decrease in the oxygen partial pressure during thermal annealing is found to enhance the Co substitutional fraction by increasing the concentration of oxygen vacancies. Magnetic properties determined from superconducting quantum interference device magnetometer (SQUID) measurements show that TiO2 crystals with a large fraction of substitutional Co are ferromagnetic at room temperature. In addition to single crystals, the feasibility of Co doping via ion implantation is studied in sol-gel synthesized TiO2 thin films. Results from grazing incidence X-ray diffraction (GIXRD) show that the implantation can produce Co doped TiO2 thin films and that the Co incorporation into Ti lattice site accompanies the transition from rutile to anatase phase. These results show that ion beam synthesis is a useful tool for producing ferromagnetic TiO2 with a high Curie temperature (TC).",

keywords = "Ferromagnetic semiconductor, Ion implantation, TiO",

author = "Lee, \{J. K.\} and Jung, \{H. S.\} and Valdez, \{J. A.\} and Hundley, \{M. F.\} and Thompson, \{J. D.\} and Sickafus, \{K. E.\} and M. Nastasi and Hamby, \{D. W.\} and Lucca, \{D. A.\}",

year = "2006",

month = sep,

doi = "10.1016/j.nimb.2006.04.171",

language = "English",

volume = "250",

pages = "279--282",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

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number = "1-2 SPEC. ISS.",

}

Lee, JK, Jung, HS, Valdez, JA, Hundley, MF, Thompson, JD, Sickafus, KE, Nastasi, M, Hamby, DW & Lucca, DA 2006, 'Room temperature ferromagnetism of Co doped TiO₂ using ion implantation and defect engineering', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 250, no. 1-2 SPEC. ISS., pp. 279-282. https://doi.org/10.1016/j.nimb.2006.04.171

Room temperature ferromagnetism of Co doped TiO₂ using ion implantation and defect engineering. / Lee, J. K.; Jung, H. S.; Valdez, J. A. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 250, No. 1-2 SPEC. ISS., 09.2006, p. 279-282.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Room temperature ferromagnetism of Co doped TiO2 using ion implantation and defect engineering

AU - Lee, J. K.

AU - Jung, H. S.

AU - Valdez, J. A.

AU - Hundley, M. F.

AU - Thompson, J. D.

AU - Sickafus, K. E.

AU - Nastasi, M.

AU - Hamby, D. W.

AU - Lucca, D. A.

PY - 2006/9

Y1 - 2006/9

N2 - Ferromagnetic (FM) semiconductors obtained by doping ferromagnetic elements into a nonmagnetic semiconductor matrix are essential for the second generation of spintronics devices. In this study, we investigate Co doping behavior and subsequent magnetic properties in Co implanted and thermally annealed TiO2. In TiO2 single crystals, a decrease in the oxygen partial pressure during thermal annealing is found to enhance the Co substitutional fraction by increasing the concentration of oxygen vacancies. Magnetic properties determined from superconducting quantum interference device magnetometer (SQUID) measurements show that TiO2 crystals with a large fraction of substitutional Co are ferromagnetic at room temperature. In addition to single crystals, the feasibility of Co doping via ion implantation is studied in sol-gel synthesized TiO2 thin films. Results from grazing incidence X-ray diffraction (GIXRD) show that the implantation can produce Co doped TiO2 thin films and that the Co incorporation into Ti lattice site accompanies the transition from rutile to anatase phase. These results show that ion beam synthesis is a useful tool for producing ferromagnetic TiO2 with a high Curie temperature (TC).

AB - Ferromagnetic (FM) semiconductors obtained by doping ferromagnetic elements into a nonmagnetic semiconductor matrix are essential for the second generation of spintronics devices. In this study, we investigate Co doping behavior and subsequent magnetic properties in Co implanted and thermally annealed TiO2. In TiO2 single crystals, a decrease in the oxygen partial pressure during thermal annealing is found to enhance the Co substitutional fraction by increasing the concentration of oxygen vacancies. Magnetic properties determined from superconducting quantum interference device magnetometer (SQUID) measurements show that TiO2 crystals with a large fraction of substitutional Co are ferromagnetic at room temperature. In addition to single crystals, the feasibility of Co doping via ion implantation is studied in sol-gel synthesized TiO2 thin films. Results from grazing incidence X-ray diffraction (GIXRD) show that the implantation can produce Co doped TiO2 thin films and that the Co incorporation into Ti lattice site accompanies the transition from rutile to anatase phase. These results show that ion beam synthesis is a useful tool for producing ferromagnetic TiO2 with a high Curie temperature (TC).

KW - Ferromagnetic semiconductor

KW - Ion implantation

KW - TiO

UR - https://www.scopus.com/pages/publications/33746314232

U2 - 10.1016/j.nimb.2006.04.171

DO - 10.1016/j.nimb.2006.04.171

M3 - Article

AN - SCOPUS:33746314232

SN - 0168-583X

VL - 250

SP - 279

EP - 282

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2 SPEC. ISS.

ER -

Room temperature ferromagnetism of Co doped TiO₂ using ion implantation and defect engineering

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