Roles of N2 gas in etching of platinum by inductively coupled Ar/Cl2/N2 plasmas

Jae Heung Ryu; Nam Hoon Kim; Hyeon Soo Kim; Geun Young Yeom; Eui Goo Chang; Chang Il Kim

doi:10.1116/1.582357

Roles of N₂ gas in etching of platinum by inductively coupled Ar/Cl₂/N₂ plasmas

Jae Heung Ryu, Nam Hoon Kim, Hyeon Soo Kim, Geun Young Yeom, Eui Goo Chang, Chang Il Kim

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

A Pt film was etched with inductively coupled plasmas (ICP) by varying the content of N₂ gas in Ar(90)/Cl(10) plasma. The role of N₂ in Pt etching was investigated using x ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The etch profile of the Pt film was analyzed by scanning electron microscopy (SEM). The etch rate of Pt film is the highest with 20% additive N₂ gas in the Ar(90)/Cl₂(10) plasma. The maximum etch rates of the Pt film and selectivity of Pt to SiO₂ are 1425 angstroms/min and 1.71, respectively.

Original language	English
Pages (from-to)	1377-1380
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	4 I
DOIs	https://doi.org/10.1116/1.582357
State	Published - Jul 2000
Event	46th National Symposium of the American Vacuum Society - Seatlle, WA, USA Duration: 25 Oct 1999 → 29 Oct 1999

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@article{348e24551e3645f6975ecd1c6042126e,

title = "Roles of N2 gas in etching of platinum by inductively coupled Ar/Cl2/N2 plasmas",

abstract = "A Pt film was etched with inductively coupled plasmas (ICP) by varying the content of N2 gas in Ar(90)/Cl(10) plasma. The role of N2 in Pt etching was investigated using x ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The etch profile of the Pt film was analyzed by scanning electron microscopy (SEM). The etch rate of Pt film is the highest with 20\% additive N2 gas in the Ar(90)/Cl2(10) plasma. The maximum etch rates of the Pt film and selectivity of Pt to SiO2 are 1425 angstroms/min and 1.71, respectively.",

author = "Ryu, \{Jae Heung\} and Kim, \{Nam Hoon\} and Kim, \{Hyeon Soo\} and Yeom, \{Geun Young\} and Chang, \{Eui Goo\} and Kim, \{Chang Il\}",

year = "2000",

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doi = "10.1116/1.582357",

language = "English",

volume = "18",

pages = "1377--1380",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

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number = "4 I",

note = "46th National Symposium of the American Vacuum Society ; Conference date: 25-10-1999 Through 29-10-1999",

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TY - JOUR

T1 - Roles of N2 gas in etching of platinum by inductively coupled Ar/Cl2/N2 plasmas

AU - Ryu, Jae Heung

AU - Kim, Nam Hoon

AU - Kim, Hyeon Soo

AU - Yeom, Geun Young

AU - Chang, Eui Goo

AU - Kim, Chang Il

PY - 2000/7

Y1 - 2000/7

N2 - A Pt film was etched with inductively coupled plasmas (ICP) by varying the content of N2 gas in Ar(90)/Cl(10) plasma. The role of N2 in Pt etching was investigated using x ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The etch profile of the Pt film was analyzed by scanning electron microscopy (SEM). The etch rate of Pt film is the highest with 20% additive N2 gas in the Ar(90)/Cl2(10) plasma. The maximum etch rates of the Pt film and selectivity of Pt to SiO2 are 1425 angstroms/min and 1.71, respectively.

AB - A Pt film was etched with inductively coupled plasmas (ICP) by varying the content of N2 gas in Ar(90)/Cl(10) plasma. The role of N2 in Pt etching was investigated using x ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The etch profile of the Pt film was analyzed by scanning electron microscopy (SEM). The etch rate of Pt film is the highest with 20% additive N2 gas in the Ar(90)/Cl2(10) plasma. The maximum etch rates of the Pt film and selectivity of Pt to SiO2 are 1425 angstroms/min and 1.71, respectively.

UR - https://www.scopus.com/pages/publications/0034227618

U2 - 10.1116/1.582357

DO - 10.1116/1.582357

M3 - Conference article

AN - SCOPUS:0034227618

SN - 0734-2101

VL - 18

SP - 1377

EP - 1380

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4 I

T2 - 46th National Symposium of the American Vacuum Society

Y2 - 25 October 1999 through 29 October 1999

ER -

Roles of N₂ gas in etching of platinum by inductively coupled Ar/Cl₂/N₂ plasmas

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