Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors

Ju Ho Lee; Cheol Hyoun Ahn; Sooyeon Hwang; Chang Ho Woo; Jin Seong Park; Hyung Koun Cho; Jeong Yong Lee

doi:10.1016/j.tsf.2011.04.041

Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors

Ju Ho Lee
, Cheol Hyoun Ahn
, Sooyeon Hwang
, Chang Ho Woo
, Jin Seong Park
, Hyung Koun Cho
, Jeong Yong Lee

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The strong correlation between the microstructural characteristics of ZnO channel layers grown at various temperatures by radio-frequency magnetron sputtering and the electrical performances of resulting bottom-gate thin film transistors (TFTs) was reported. Transmission electron microscopy revealed that increasing growth temperature enhanced degree of c-axis preferred orientation and enlarged width of columns in the ZnO films. The ZnO channel layers grown at 250 and 350 °C exhibited TFT saturation behavior. However, growing them at ≤ 350 °C produced small grains in the junctions of ZnO/SiO₂ interface and grain boundaries, which led to hump behavior in TFT transfer curve caused by formation of additional boundaries.

Original language	English
Pages (from-to)	6801-6805
Number of pages	5
Journal	Thin Solid Films
Volume	519
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2011.04.041
State	Published - 1 Aug 2011

Keywords

Hump
Microstructure
Ostwald ripening
Thin film transistor
ZnO

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10.1016/j.tsf.2011.04.041

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title = "Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors",

abstract = "The strong correlation between the microstructural characteristics of ZnO channel layers grown at various temperatures by radio-frequency magnetron sputtering and the electrical performances of resulting bottom-gate thin film transistors (TFTs) was reported. Transmission electron microscopy revealed that increasing growth temperature enhanced degree of c-axis preferred orientation and enlarged width of columns in the ZnO films. The ZnO channel layers grown at 250 and 350 °C exhibited TFT saturation behavior. However, growing them at ≤ 350 °C produced small grains in the junctions of ZnO/SiO2 interface and grain boundaries, which led to hump behavior in TFT transfer curve caused by formation of additional boundaries.",

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AU - Lee, Ju Ho

AU - Ahn, Cheol Hyoun

AU - Hwang, Sooyeon

AU - Woo, Chang Ho

AU - Park, Jin Seong

AU - Cho, Hyung Koun

AU - Lee, Jeong Yong

PY - 2011/8/1

Y1 - 2011/8/1

N2 - The strong correlation between the microstructural characteristics of ZnO channel layers grown at various temperatures by radio-frequency magnetron sputtering and the electrical performances of resulting bottom-gate thin film transistors (TFTs) was reported. Transmission electron microscopy revealed that increasing growth temperature enhanced degree of c-axis preferred orientation and enlarged width of columns in the ZnO films. The ZnO channel layers grown at 250 and 350 °C exhibited TFT saturation behavior. However, growing them at ≤ 350 °C produced small grains in the junctions of ZnO/SiO2 interface and grain boundaries, which led to hump behavior in TFT transfer curve caused by formation of additional boundaries.

AB - The strong correlation between the microstructural characteristics of ZnO channel layers grown at various temperatures by radio-frequency magnetron sputtering and the electrical performances of resulting bottom-gate thin film transistors (TFTs) was reported. Transmission electron microscopy revealed that increasing growth temperature enhanced degree of c-axis preferred orientation and enlarged width of columns in the ZnO films. The ZnO channel layers grown at 250 and 350 °C exhibited TFT saturation behavior. However, growing them at ≤ 350 °C produced small grains in the junctions of ZnO/SiO2 interface and grain boundaries, which led to hump behavior in TFT transfer curve caused by formation of additional boundaries.

KW - Hump

KW - Microstructure

KW - Ostwald ripening

KW - Thin film transistor

KW - ZnO

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DO - 10.1016/j.tsf.2011.04.041

M3 - Article

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EP - 6805

JO - Thin Solid Films

JF - Thin Solid Films

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ER -

Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors

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Keywords

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