Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs

Wonjun Shin; Ryun Han Koo; Sangwoo Kim; Dongseok Kwon; Jae Joon Kim; Daewoong Kwon; Jong Ho Lee

doi:10.1109/LED.2024.3425155

Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs

Wonjun Shin
, Ryun Han Koo
, Sangwoo Kim
, Dongseok Kwon
, Jae Joon Kim
, Daewoong Kwon
, Jong Ho Lee

Department of Semiconductor Convergence Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This study investigates the 1/f noise characteristics of Schottky barrier (SB) ferroelectric field-effect transistors (FeFETs) and their response to program/erase (P/E) cycling-induced damage. The robustness of SB FeFETs to this damage is demonstrated, with the 1/f noise remaining unaffected even after the complete collapse of the memory window. The origin of this robustness is attributed to the separation of 1/f noise source (SB contact) and the region where P/E cycling-induced damage occurs (ferroelectric-dielectric interface).

Original language	English
Pages (from-to)	1645-1648
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	45
Issue number	9
DOIs	https://doi.org/10.1109/LED.2024.3425155
State	Published - 2024

Keywords

1/f noise
program/erase cycling
Schottky barrier ferroelectric FETs (SB FeFETs)

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10.1109/LED.2024.3425155

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title = "Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs",

abstract = "This study investigates the 1/f noise characteristics of Schottky barrier (SB) ferroelectric field-effect transistors (FeFETs) and their response to program/erase (P/E) cycling-induced damage. The robustness of SB FeFETs to this damage is demonstrated, with the 1/f noise remaining unaffected even after the complete collapse of the memory window. The origin of this robustness is attributed to the separation of 1/f noise source (SB contact) and the region where P/E cycling-induced damage occurs (ferroelectric-dielectric interface).",

keywords = "1/f noise, program/erase cycling, Schottky barrier ferroelectric FETs (SB FeFETs)",

author = "Wonjun Shin and Koo, \{Ryun Han\} and Sangwoo Kim and Dongseok Kwon and Kim, \{Jae Joon\} and Daewoong Kwon and Lee, \{Jong Ho\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2024",

doi = "10.1109/LED.2024.3425155",

language = "English",

volume = "45",

pages = "1645--1648",

journal = "IEEE Electron Device Letters",

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T1 - Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs

AU - Shin, Wonjun

AU - Koo, Ryun Han

AU - Kim, Sangwoo

AU - Kwon, Dongseok

AU - Kim, Jae Joon

AU - Kwon, Daewoong

AU - Lee, Jong Ho

PY - 2024

Y1 - 2024

N2 - This study investigates the 1/f noise characteristics of Schottky barrier (SB) ferroelectric field-effect transistors (FeFETs) and their response to program/erase (P/E) cycling-induced damage. The robustness of SB FeFETs to this damage is demonstrated, with the 1/f noise remaining unaffected even after the complete collapse of the memory window. The origin of this robustness is attributed to the separation of 1/f noise source (SB contact) and the region where P/E cycling-induced damage occurs (ferroelectric-dielectric interface).

AB - This study investigates the 1/f noise characteristics of Schottky barrier (SB) ferroelectric field-effect transistors (FeFETs) and their response to program/erase (P/E) cycling-induced damage. The robustness of SB FeFETs to this damage is demonstrated, with the 1/f noise remaining unaffected even after the complete collapse of the memory window. The origin of this robustness is attributed to the separation of 1/f noise source (SB contact) and the region where P/E cycling-induced damage occurs (ferroelectric-dielectric interface).

KW - 1/f noise

KW - program/erase cycling

KW - Schottky barrier ferroelectric FETs (SB FeFETs)

UR - https://www.scopus.com/pages/publications/85198301100

U2 - 10.1109/LED.2024.3425155

DO - 10.1109/LED.2024.3425155

M3 - Article

AN - SCOPUS:85198301100

SN - 0741-3106

VL - 45

SP - 1645

EP - 1648

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs

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Keywords

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