RF magnetron sputtered indium tin oxide films with high transmittance and work function for a-Si:H/c-Si heterojunction solar cells

Shahzada Qamar Hussain; Woong Kyo Oh; Shihyun Ahn; Anh Huy Tuan Le; Sunbo Kim; Youngseok Lee; Junsin Yi

doi:10.1016/j.vacuum.2013.07.004

RF magnetron sputtered indium tin oxide films with high transmittance and work function for a-Si:H/c-Si heterojunction solar cells

Shahzada Qamar Hussain, Woong Kyo Oh, Shihyun Ahn, Anh Huy Tuan Le, Sunbo Kim, Youngseok Lee, Junsin Yi

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

The RF magnetron sputtered indium tin oxide (ITO) films were deposited on glass substrates with low resistivity, high transmittance and work function for various oxygen (O₂) flow rates. The addition of small O₂ contents during the sputtering process increased the Hall mobility of ITO films while carrier concentration was decreased. The work function of ITO films was enhanced from 4.31 to 4.81 eV through the growth of (222) plane having relatively low surface energy. The highly transparent ITO films were employed as front anti-reflection layer in heterojunction with intrinsic thin layer (HIT) solar cells and the best photo-voltage parameters were found to be; V _oc = 665 mV, J_sc = 35.1 mA/cm², FF = 73.2% and η = 17.1% for the O₂ flow rate of 0.1 sccm. The high work function ITO films play an important role for barrier height modification in HIT solar cell.

Original language	English
Pages (from-to)	18-21
Number of pages	4
Journal	Vacuum
Volume	101
DOIs	https://doi.org/10.1016/j.vacuum.2013.07.004
State	Published - 2014

Keywords

Barrier height
Figure of merit
HIT solar cell
ITO/a-Si:H(p) interface
Reactive ITO films
Work function

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.vacuum.2013.07.004

Cite this

@article{79f426520d524056a494c9b7b6f5237e,

title = "RF magnetron sputtered indium tin oxide films with high transmittance and work function for a-Si:H/c-Si heterojunction solar cells",

abstract = "The RF magnetron sputtered indium tin oxide (ITO) films were deposited on glass substrates with low resistivity, high transmittance and work function for various oxygen (O2) flow rates. The addition of small O2 contents during the sputtering process increased the Hall mobility of ITO films while carrier concentration was decreased. The work function of ITO films was enhanced from 4.31 to 4.81 eV through the growth of (222) plane having relatively low surface energy. The highly transparent ITO films were employed as front anti-reflection layer in heterojunction with intrinsic thin layer (HIT) solar cells and the best photo-voltage parameters were found to be; V oc = 665 mV, Jsc = 35.1 mA/cm2, FF = 73.2\% and η = 17.1\% for the O2 flow rate of 0.1 sccm. The high work function ITO films play an important role for barrier height modification in HIT solar cell.",

keywords = "Barrier height, Figure of merit, HIT solar cell, ITO/a-Si:H(p) interface, Reactive ITO films, Work function",

author = "Hussain, \{Shahzada Qamar\} and Oh, \{Woong Kyo\} and Shihyun Ahn and Le, \{Anh Huy Tuan\} and Sunbo Kim and Youngseok Lee and Junsin Yi",

year = "2014",

doi = "10.1016/j.vacuum.2013.07.004",

language = "English",

volume = "101",

pages = "18--21",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - RF magnetron sputtered indium tin oxide films with high transmittance and work function for a-Si:H/c-Si heterojunction solar cells

AU - Hussain, Shahzada Qamar

AU - Oh, Woong Kyo

AU - Ahn, Shihyun

AU - Le, Anh Huy Tuan

AU - Kim, Sunbo

AU - Lee, Youngseok

AU - Yi, Junsin

PY - 2014

Y1 - 2014

N2 - The RF magnetron sputtered indium tin oxide (ITO) films were deposited on glass substrates with low resistivity, high transmittance and work function for various oxygen (O2) flow rates. The addition of small O2 contents during the sputtering process increased the Hall mobility of ITO films while carrier concentration was decreased. The work function of ITO films was enhanced from 4.31 to 4.81 eV through the growth of (222) plane having relatively low surface energy. The highly transparent ITO films were employed as front anti-reflection layer in heterojunction with intrinsic thin layer (HIT) solar cells and the best photo-voltage parameters were found to be; V oc = 665 mV, Jsc = 35.1 mA/cm2, FF = 73.2% and η = 17.1% for the O2 flow rate of 0.1 sccm. The high work function ITO films play an important role for barrier height modification in HIT solar cell.

AB - The RF magnetron sputtered indium tin oxide (ITO) films were deposited on glass substrates with low resistivity, high transmittance and work function for various oxygen (O2) flow rates. The addition of small O2 contents during the sputtering process increased the Hall mobility of ITO films while carrier concentration was decreased. The work function of ITO films was enhanced from 4.31 to 4.81 eV through the growth of (222) plane having relatively low surface energy. The highly transparent ITO films were employed as front anti-reflection layer in heterojunction with intrinsic thin layer (HIT) solar cells and the best photo-voltage parameters were found to be; V oc = 665 mV, Jsc = 35.1 mA/cm2, FF = 73.2% and η = 17.1% for the O2 flow rate of 0.1 sccm. The high work function ITO films play an important role for barrier height modification in HIT solar cell.

KW - Barrier height

KW - Figure of merit

KW - HIT solar cell

KW - ITO/a-Si:H(p) interface

KW - Reactive ITO films

KW - Work function

UR - https://www.scopus.com/pages/publications/84883187221

U2 - 10.1016/j.vacuum.2013.07.004

DO - 10.1016/j.vacuum.2013.07.004

M3 - Article

AN - SCOPUS:84883187221

SN - 0042-207X

VL - 101

SP - 18

EP - 21

JO - Vacuum

JF - Vacuum

ER -

RF magnetron sputtered indium tin oxide films with high transmittance and work function for a-Si:H/c-Si heterojunction solar cells

Abstract

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this