RF characterization of germanium nanowire field effect transistors

Myung Gil Kang; Dong Hoon Hwang; Byung Sung Kim; Dongmok Whang; Sung Woo Hwang

doi:10.1063/1.3666382

RF characterization of germanium nanowire field effect transistors

Myung Gil Kang
, Dong Hoon Hwang
, Byung Sung Kim
, Dongmok Whang
, Sung Woo Hwang

Department of Advanced Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The radio frequency (RF) characterizations of a field effect transistor (FET) consisting of a single Ge nanowire (GeNW) were obtained from S-parameter measurements. The FET had a coplanar waveguide (CPW) structure and a single GeNW was aligned by an AC dielectrophoresis method. The S-parameters of the FET were obtained in the frequency range from 0.05 to 40 GHz using a vector network analyzer. And the analyses of the obtained data were performed by equivalent circuit modeling using advanced device system (ADS) simulation.

Original language	English
Title of host publication	Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages	319-320
Number of pages	2
DOIs	https://doi.org/10.1063/1.3666382
State	Published - 2011
Event	30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: 25 Jul 2010 → 30 Jul 2010

Publication series

Name	AIP Conference Proceedings
Volume	1399
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	30th International Conference on the Physics of Semiconductors, ICPS-30
Country/Territory	Korea, Republic of
City	Seoul
Period	25/07/10 → 30/07/10

Keywords

Ge
Nanowire
RF
S-parameter

Access to Document

10.1063/1.3666382

Cite this

@inproceedings{5342db492c024891a9ad7343691ae48a,

title = "RF characterization of germanium nanowire field effect transistors",

abstract = "The radio frequency (RF) characterizations of a field effect transistor (FET) consisting of a single Ge nanowire (GeNW) were obtained from S-parameter measurements. The FET had a coplanar waveguide (CPW) structure and a single GeNW was aligned by an AC dielectrophoresis method. The S-parameters of the FET were obtained in the frequency range from 0.05 to 40 GHz using a vector network analyzer. And the analyses of the obtained data were performed by equivalent circuit modeling using advanced device system (ADS) simulation.",

keywords = "Ge, Nanowire, RF, S-parameter",

author = "Kang, \{Myung Gil\} and Hwang, \{Dong Hoon\} and Kim, \{Byung Sung\} and Dongmok Whang and Hwang, \{Sung Woo\}",

year = "2011",

doi = "10.1063/1.3666382",

language = "English",

isbn = "9780735410022",

series = "AIP Conference Proceedings",

pages = "319--320",

booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",

note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",

}

Kang, MG, Hwang, DH, Kim, BS, Whang, D & Hwang, SW 2011, RF characterization of germanium nanowire field effect transistors. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 319-320, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 25/07/10. https://doi.org/10.1063/1.3666382

RF characterization of germanium nanowire field effect transistors. / Kang, Myung Gil; Hwang, Dong Hoon; Kim, Byung Sung et al.
Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 319-320 (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - RF characterization of germanium nanowire field effect transistors

AU - Kang, Myung Gil

AU - Hwang, Dong Hoon

AU - Kim, Byung Sung

AU - Whang, Dongmok

AU - Hwang, Sung Woo

PY - 2011

Y1 - 2011

N2 - The radio frequency (RF) characterizations of a field effect transistor (FET) consisting of a single Ge nanowire (GeNW) were obtained from S-parameter measurements. The FET had a coplanar waveguide (CPW) structure and a single GeNW was aligned by an AC dielectrophoresis method. The S-parameters of the FET were obtained in the frequency range from 0.05 to 40 GHz using a vector network analyzer. And the analyses of the obtained data were performed by equivalent circuit modeling using advanced device system (ADS) simulation.

AB - The radio frequency (RF) characterizations of a field effect transistor (FET) consisting of a single Ge nanowire (GeNW) were obtained from S-parameter measurements. The FET had a coplanar waveguide (CPW) structure and a single GeNW was aligned by an AC dielectrophoresis method. The S-parameters of the FET were obtained in the frequency range from 0.05 to 40 GHz using a vector network analyzer. And the analyses of the obtained data were performed by equivalent circuit modeling using advanced device system (ADS) simulation.

KW - Ge

KW - Nanowire

KW - RF

KW - S-parameter

UR - https://www.scopus.com/pages/publications/84862789607

U2 - 10.1063/1.3666382

DO - 10.1063/1.3666382

M3 - Conference contribution

AN - SCOPUS:84862789607

SN - 9780735410022

T3 - AIP Conference Proceedings

SP - 319

EP - 320

BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30

T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30

Y2 - 25 July 2010 through 30 July 2010

ER -

RF characterization of germanium nanowire field effect transistors

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Keywords

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