Reversible plasma switching in epitaxial BiFeO3 thin films

Yunseok Kim; Ionela Vrejoiu; Dietrich Hesse; Marin Alexe

doi:10.1063/1.3431585

Reversible plasma switching in epitaxial BiFeO₃ thin films

Yunseok Kim, Ionela Vrejoiu, Dietrich Hesse, Marin Alexe

Max Planck Institute of Microstructure Physics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Reversible plasma switching in epitaxial multiferroic BiFeO₃ thin films was directly observed and analyzed using piezoresponse force microscopy. The polarization could be reversibly switched using oxygen plasma and a subsequent thermal annealing treatment in vacuum, respectively. The domain wall velocity during plasma switching, estimated to about 10^-8 m/s, is much slower compared to the normal electrical switching, however a large area of square centimeter scale could be stably switched. The results demonstrate that reversible plasma switching can be achieved by oxygen plasma treatment and it can be a useful tool for an electrode-less control of ferroelectric switching on large area.

Original language	English
Article number	202902
Journal	Applied Physics Letters
Volume	96
Issue number	20
DOIs	https://doi.org/10.1063/1.3431585
State	Published - 17 May 2010
Externally published	Yes

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title = "Reversible plasma switching in epitaxial BiFeO3 thin films",

abstract = "Reversible plasma switching in epitaxial multiferroic BiFeO3 thin films was directly observed and analyzed using piezoresponse force microscopy. The polarization could be reversibly switched using oxygen plasma and a subsequent thermal annealing treatment in vacuum, respectively. The domain wall velocity during plasma switching, estimated to about 10-8 m/s, is much slower compared to the normal electrical switching, however a large area of square centimeter scale could be stably switched. The results demonstrate that reversible plasma switching can be achieved by oxygen plasma treatment and it can be a useful tool for an electrode-less control of ferroelectric switching on large area.",

author = "Yunseok Kim and Ionela Vrejoiu and Dietrich Hesse and Marin Alexe",

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T1 - Reversible plasma switching in epitaxial BiFeO3 thin films

AU - Kim, Yunseok

AU - Vrejoiu, Ionela

AU - Hesse, Dietrich

AU - Alexe, Marin

PY - 2010/5/17

Y1 - 2010/5/17

N2 - Reversible plasma switching in epitaxial multiferroic BiFeO3 thin films was directly observed and analyzed using piezoresponse force microscopy. The polarization could be reversibly switched using oxygen plasma and a subsequent thermal annealing treatment in vacuum, respectively. The domain wall velocity during plasma switching, estimated to about 10-8 m/s, is much slower compared to the normal electrical switching, however a large area of square centimeter scale could be stably switched. The results demonstrate that reversible plasma switching can be achieved by oxygen plasma treatment and it can be a useful tool for an electrode-less control of ferroelectric switching on large area.

AB - Reversible plasma switching in epitaxial multiferroic BiFeO3 thin films was directly observed and analyzed using piezoresponse force microscopy. The polarization could be reversibly switched using oxygen plasma and a subsequent thermal annealing treatment in vacuum, respectively. The domain wall velocity during plasma switching, estimated to about 10-8 m/s, is much slower compared to the normal electrical switching, however a large area of square centimeter scale could be stably switched. The results demonstrate that reversible plasma switching can be achieved by oxygen plasma treatment and it can be a useful tool for an electrode-less control of ferroelectric switching on large area.

UR - https://www.scopus.com/pages/publications/77953015670

U2 - 10.1063/1.3431585

DO - 10.1063/1.3431585

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VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

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ER -

Reversible plasma switching in epitaxial BiFeO₃ thin films

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