Resistive switching in TiO 2 thin films using the semiconducting in-Ga-Zn-O electrode

Jun Yeong Seok; Gun Hwan Kim; Jeong Hwan Kim; Un Ki Kim; Yoon Jang Chung; Seul Ji Song; Jung Ho Yoon; Kyung Jin Yoon; Min Hwan Lee; Kyung Min Kim; Cheol Seong Hwang

doi:10.1109/LED.2011.2182175

Resistive switching in TiO ₂ thin films using the semiconducting in-Ga-Zn-O electrode

Jun Yeong Seok, Gun Hwan Kim, Jeong Hwan Kim, Un Ki Kim, Yoon Jang Chung, Seul Ji Song, Jung Ho Yoon, Kyung Jin Yoon, Min Hwan Lee, Kyung Min Kim, Cheol Seong Hwang

Seoul National University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Resistance switching behaviors in a PtIn ₂Ga ₂ZnO ₇(IGZO)TiO ₂Pt sample were examined for their potential use in diode-free memory integration. The In-Ga-Zn-O (IGZO) layer worked as the semiconductor layer, exhibiting accumulation or depletion of carriers depending on the polarity of the bias. Electroforming was possible only under the IGZO depletion condition due to the limited background leakage current flow. The repeated set/reset operation was also observed under the depletion condition. While the reset was possible, set was impeded by the high background current flow of the IGZO layer under the accumulation condition.

Original language	English
Article number	6151009
Pages (from-to)	582-584
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	4
DOIs	https://doi.org/10.1109/LED.2011.2182175
State	Published - Apr 2012
Externally published	Yes

Keywords

Nonvolatile memory
resistive switching random access memory (ReRAM)

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10.1109/LED.2011.2182175

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title = "Resistive switching in TiO 2 thin films using the semiconducting in-Ga-Zn-O electrode",

abstract = "Resistance switching behaviors in a PtIn 2Ga 2ZnO 7(IGZO)TiO 2Pt sample were examined for their potential use in diode-free memory integration. The In-Ga-Zn-O (IGZO) layer worked as the semiconductor layer, exhibiting accumulation or depletion of carriers depending on the polarity of the bias. Electroforming was possible only under the IGZO depletion condition due to the limited background leakage current flow. The repeated set/reset operation was also observed under the depletion condition. While the reset was possible, set was impeded by the high background current flow of the IGZO layer under the accumulation condition.",

keywords = "Nonvolatile memory, resistive switching random access memory (ReRAM)",

author = "Seok, \{Jun Yeong\} and Kim, \{Gun Hwan\} and Kim, \{Jeong Hwan\} and Kim, \{Un Ki\} and Chung, \{Yoon Jang\} and Song, \{Seul Ji\} and Yoon, \{Jung Ho\} and Yoon, \{Kyung Jin\} and Lee, \{Min Hwan\} and Kim, \{Kyung Min\} and Hwang, \{Cheol Seong\}",

year = "2012",

month = apr,

doi = "10.1109/LED.2011.2182175",

language = "English",

volume = "33",

pages = "582--584",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Resistive switching in TiO 2 thin films using the semiconducting in-Ga-Zn-O electrode

AU - Seok, Jun Yeong

AU - Kim, Gun Hwan

AU - Kim, Jeong Hwan

AU - Kim, Un Ki

AU - Chung, Yoon Jang

AU - Song, Seul Ji

AU - Yoon, Jung Ho

AU - Yoon, Kyung Jin

AU - Lee, Min Hwan

AU - Kim, Kyung Min

AU - Hwang, Cheol Seong

PY - 2012/4

Y1 - 2012/4

N2 - Resistance switching behaviors in a PtIn 2Ga 2ZnO 7(IGZO)TiO 2Pt sample were examined for their potential use in diode-free memory integration. The In-Ga-Zn-O (IGZO) layer worked as the semiconductor layer, exhibiting accumulation or depletion of carriers depending on the polarity of the bias. Electroforming was possible only under the IGZO depletion condition due to the limited background leakage current flow. The repeated set/reset operation was also observed under the depletion condition. While the reset was possible, set was impeded by the high background current flow of the IGZO layer under the accumulation condition.

AB - Resistance switching behaviors in a PtIn 2Ga 2ZnO 7(IGZO)TiO 2Pt sample were examined for their potential use in diode-free memory integration. The In-Ga-Zn-O (IGZO) layer worked as the semiconductor layer, exhibiting accumulation or depletion of carriers depending on the polarity of the bias. Electroforming was possible only under the IGZO depletion condition due to the limited background leakage current flow. The repeated set/reset operation was also observed under the depletion condition. While the reset was possible, set was impeded by the high background current flow of the IGZO layer under the accumulation condition.

KW - Nonvolatile memory

KW - resistive switching random access memory (ReRAM)

UR - https://www.scopus.com/pages/publications/84862788677

U2 - 10.1109/LED.2011.2182175

DO - 10.1109/LED.2011.2182175

M3 - Article

AN - SCOPUS:84862788677

SN - 0741-3106

VL - 33

SP - 582

EP - 584

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

M1 - 6151009

ER -

Resistive switching in TiO ₂ thin films using the semiconducting in-Ga-Zn-O electrode

Abstract

Keywords

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