Resistive switching and threshold current of Cr-doped SrTiO3 thin films deposited by pulsed laser deposition

Chulho Jung; Taekjib Choi; Bach Thang Phan; Jaichan Lee

doi:10.1080/10584580701249397

Resistive switching and threshold current of Cr-doped SrTiO₃ thin films deposited by pulsed laser deposition

Chulho Jung, Taekjib Choi, Bach Thang Phan, Jaichan Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The resistive switching of 0.2% Cr-doped SrTiO₃ (Cr-STO) thin films grown on (La_0.5, Sr_0.5)CoO₃/SrTiO ₃ (LSCO/STO) substrate have been investigated. The structure in a metal-insulator-metal (MIM) i.e., Pt/Cr-STO/LSCO, shows hysteretic and asymmetric behaviors in current-voltage (I-V) characteristics. The current-voltage characteristics are attributed to the resistive switching of Cr-STO thin films between high resistance state (HRS) and low resistance state (LRS) by applying pulsed or dc bias voltage stress. The current and voltage ramp sweeps in the I-V measurement reveal that threshold current is required to induce the resistive switching from HRS to LRS in the negative voltage region.

Original language	English
Pages (from-to)	107-112
Number of pages	6
Journal	Integrated Ferroelectrics
Volume	90
Issue number	1
DOIs	https://doi.org/10.1080/10584580701249397
State	Published - 2007

Keywords

Cr-doped SrTiO
Current-voltage characteristics
Electric transport properties
Nonvolatile random access memory
Resistive switching effect

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10.1080/10584580701249397

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title = "Resistive switching and threshold current of Cr-doped SrTiO3 thin films deposited by pulsed laser deposition",

abstract = "The resistive switching of 0.2\% Cr-doped SrTiO3 (Cr-STO) thin films grown on (La0.5, Sr0.5)CoO3/SrTiO 3 (LSCO/STO) substrate have been investigated. The structure in a metal-insulator-metal (MIM) i.e., Pt/Cr-STO/LSCO, shows hysteretic and asymmetric behaviors in current-voltage (I-V) characteristics. The current-voltage characteristics are attributed to the resistive switching of Cr-STO thin films between high resistance state (HRS) and low resistance state (LRS) by applying pulsed or dc bias voltage stress. The current and voltage ramp sweeps in the I-V measurement reveal that threshold current is required to induce the resistive switching from HRS to LRS in the negative voltage region.",

keywords = "Cr-doped SrTiO, Current-voltage characteristics, Electric transport properties, Nonvolatile random access memory, Resistive switching effect",

author = "Chulho Jung and Taekjib Choi and Phan, \{Bach Thang\} and Jaichan Lee",

year = "2007",

doi = "10.1080/10584580701249397",

language = "English",

volume = "90",

pages = "107--112",

journal = "Integrated Ferroelectrics",

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TY - JOUR

T1 - Resistive switching and threshold current of Cr-doped SrTiO3 thin films deposited by pulsed laser deposition

AU - Jung, Chulho

AU - Choi, Taekjib

AU - Phan, Bach Thang

AU - Lee, Jaichan

PY - 2007

Y1 - 2007

N2 - The resistive switching of 0.2% Cr-doped SrTiO3 (Cr-STO) thin films grown on (La0.5, Sr0.5)CoO3/SrTiO 3 (LSCO/STO) substrate have been investigated. The structure in a metal-insulator-metal (MIM) i.e., Pt/Cr-STO/LSCO, shows hysteretic and asymmetric behaviors in current-voltage (I-V) characteristics. The current-voltage characteristics are attributed to the resistive switching of Cr-STO thin films between high resistance state (HRS) and low resistance state (LRS) by applying pulsed or dc bias voltage stress. The current and voltage ramp sweeps in the I-V measurement reveal that threshold current is required to induce the resistive switching from HRS to LRS in the negative voltage region.

AB - The resistive switching of 0.2% Cr-doped SrTiO3 (Cr-STO) thin films grown on (La0.5, Sr0.5)CoO3/SrTiO 3 (LSCO/STO) substrate have been investigated. The structure in a metal-insulator-metal (MIM) i.e., Pt/Cr-STO/LSCO, shows hysteretic and asymmetric behaviors in current-voltage (I-V) characteristics. The current-voltage characteristics are attributed to the resistive switching of Cr-STO thin films between high resistance state (HRS) and low resistance state (LRS) by applying pulsed or dc bias voltage stress. The current and voltage ramp sweeps in the I-V measurement reveal that threshold current is required to induce the resistive switching from HRS to LRS in the negative voltage region.

KW - Cr-doped SrTiO

KW - Current-voltage characteristics

KW - Electric transport properties

KW - Nonvolatile random access memory

KW - Resistive switching effect

UR - https://www.scopus.com/pages/publications/71149085017

U2 - 10.1080/10584580701249397

DO - 10.1080/10584580701249397

M3 - Article

AN - SCOPUS:71149085017

SN - 1058-4587

VL - 90

SP - 107

EP - 112

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1

ER -

Resistive switching and threshold current of Cr-doped SrTiO₃ thin films deposited by pulsed laser deposition

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Keywords

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