Removal of organic impurities from the silicon surface by oxygen and uv cleaning

Chang Koo Kim; Chan Hwa Chung; Sang Heup Moon

doi:10.1007/BF02705958

Removal of organic impurities from the silicon surface by oxygen and uv cleaning

Chang Koo Kim
, Chan Hwa Chung
, Sang Heup Moon

Seoul National University
University of California at Santa Barbara

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We have studied the effect of oxygen and water vapor on the removal of organic impurities from the porous silicon surface under UV irradiation. Infrared spectrum observations of the treated surface suggest that decomposition of oxygen to produce ozone, atomic oxygen, and hydroxyl radical is a rate determination step for the overall cleaning process.

Original language	English
Pages (from-to)	328-330
Number of pages	3
Journal	Korean Journal of Chemical Engineering
Volume	13
Issue number	3
DOIs	https://doi.org/10.1007/BF02705958
State	Published - 1996
Externally published	Yes

Keywords

Atomic Oxygen
Hydroxyl Radical
Ozone
Porous Silicon
UV Cleaning

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10.1007/BF02705958

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@article{65acb460fad24a169a91f382a081aec8,

title = "Removal of organic impurities from the silicon surface by oxygen and uv cleaning",

abstract = "We have studied the effect of oxygen and water vapor on the removal of organic impurities from the porous silicon surface under UV irradiation. Infrared spectrum observations of the treated surface suggest that decomposition of oxygen to produce ozone, atomic oxygen, and hydroxyl radical is a rate determination step for the overall cleaning process.",

keywords = "Atomic Oxygen, Hydroxyl Radical, Ozone, Porous Silicon, UV Cleaning",

author = "Kim, \{Chang Koo\} and Chung, \{Chan Hwa\} and Moon, \{Sang Heup\}",

year = "1996",

doi = "10.1007/BF02705958",

language = "English",

volume = "13",

pages = "328--330",

journal = "Korean Journal of Chemical Engineering",

issn = "0256-1115",

publisher = "Springer",

number = "3",

}

TY - JOUR

T1 - Removal of organic impurities from the silicon surface by oxygen and uv cleaning

AU - Kim, Chang Koo

AU - Chung, Chan Hwa

AU - Moon, Sang Heup

PY - 1996

Y1 - 1996

N2 - We have studied the effect of oxygen and water vapor on the removal of organic impurities from the porous silicon surface under UV irradiation. Infrared spectrum observations of the treated surface suggest that decomposition of oxygen to produce ozone, atomic oxygen, and hydroxyl radical is a rate determination step for the overall cleaning process.

AB - We have studied the effect of oxygen and water vapor on the removal of organic impurities from the porous silicon surface under UV irradiation. Infrared spectrum observations of the treated surface suggest that decomposition of oxygen to produce ozone, atomic oxygen, and hydroxyl radical is a rate determination step for the overall cleaning process.

KW - Atomic Oxygen

KW - Hydroxyl Radical

KW - Ozone

KW - Porous Silicon

KW - UV Cleaning

UR - https://www.scopus.com/pages/publications/0030517397

U2 - 10.1007/BF02705958

DO - 10.1007/BF02705958

M3 - Article

AN - SCOPUS:0030517397

SN - 0256-1115

VL - 13

SP - 328

EP - 330

JO - Korean Journal of Chemical Engineering

JF - Korean Journal of Chemical Engineering

IS - 3

ER -

Removal of organic impurities from the silicon surface by oxygen and uv cleaning

Abstract

Keywords

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