Abstract
In this study, the effect of using a neutral beam formed by low-angle forward reflection of a reactive ion beam on aspect-ratio-dependent etching (ARDE) has been investigated. When a SF 6 inductively coupled plasma and SF 6 ion beam etching are used to etch poly-Si, ARDE is observed, and the etching of poly-Si on SiO 2 shows a higher ARDE effect than the etching of poly-Si on Si. However, by using neutral beam etching with neutral beam directionality higher than 70 %, ARDE during poly-Si etching by SF 6 can be effectively removed, regardless of the sample conditions. The mechanism for the removal of ARDE 7via a directional neutral beam has been demonstrated through a computer simulation of different nanoscale features by using the two-dimensional XOOPIC code and the TRIM code.
| Original language | English |
|---|---|
| Pages (from-to) | 867-871 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 46 |
| Issue number | 4 |
| State | Published - Apr 2005 |
Keywords
- Low-angle surface reflection
- Neutral beam etching
- RIE-lag