Reliability projection and polarity dependence of TDDB for ultra thin CVD HfO2 gate dielectrics

Sung Joo Lee; S. J. Rhee; R. Clark; D. L. Kwong

Reliability projection and polarity dependence of TDDB for ultra thin CVD HfO₂ gate dielectrics

Sung Joo Lee
, S. J. Rhee
, R. Clark
, D. L. Kwong

University of Texas at Austin

Research output: Contribution to conference › Paper › peer-review

26 Scopus citations

Abstract

A systematic study of long-term reliability of ultra thin CVD HfO₂ gate stack (EOT = 10.5Å) with TaN gate electrode is presented. The polarity and area dependence and temperature acceleration of time-to-breakdown (T_BD), defect generation rate, and critical defect density are studied. It is found that T_BD is polarity-independent (T_BD,-Vg = T_{BD, + Vg}). TDDB lifetime acceleration shows that 10-year lifetime of HfO₂ gate stack is projected at Vg = 1.63 V for EOT = 8.6Å and Vg = l.88 V for EOT = 10.6 Å, at 25°C. However, after temperature acceleration of 150°C, area scaling to 0.1 cm², and the projection to low percentage failure rote of 0.01%, the maximum operating voltages are projected to be Vg = 0.6 V for EOT = 8.6 Å and Vg = 0.75 V for EOT = 10.6 Å.

Original language	English
Pages	78-79
Number of pages	2
State	Published - 2002
Externally published	Yes
Event	2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, United States Duration: 11 Jun 2002 → 13 Jun 2002

Conference

Conference	2002 Symposium on VLSI Technology Digest of Technical Papers
Country/Territory	United States
City	Honolulu, HI
Period	11/06/02 → 13/06/02

Cite this

@conference{7a289755d32b4205a4e0bcb42f5f6256,

title = "Reliability projection and polarity dependence of TDDB for ultra thin CVD HfO2 gate dielectrics",

abstract = "A systematic study of long-term reliability of ultra thin CVD HfO2 gate stack (EOT = 10.5{\AA}) with TaN gate electrode is presented. The polarity and area dependence and temperature acceleration of time-to-breakdown (TBD), defect generation rate, and critical defect density are studied. It is found that TBD is polarity-independent (TBD,-Vg = TBD, + Vg). TDDB lifetime acceleration shows that 10-year lifetime of HfO2 gate stack is projected at Vg = 1.63 V for EOT = 8.6{\AA} and Vg = l.88 V for EOT = 10.6 {\AA}, at 25°C. However, after temperature acceleration of 150°C, area scaling to 0.1 cm2, and the projection to low percentage failure rote of 0.01\%, the maximum operating voltages are projected to be Vg = 0.6 V for EOT = 8.6 {\AA} and Vg = 0.75 V for EOT = 10.6 {\AA}.",

author = "Lee, \{Sung Joo\} and Rhee, \{S. J.\} and R. Clark and Kwong, \{D. L.\}",

year = "2002",

language = "English",

pages = "78--79",

note = "2002 Symposium on VLSI Technology Digest of Technical Papers ; Conference date: 11-06-2002 Through 13-06-2002",

}

TY - CONF

T1 - Reliability projection and polarity dependence of TDDB for ultra thin CVD HfO2 gate dielectrics

AU - Lee, Sung Joo

AU - Rhee, S. J.

AU - Clark, R.

AU - Kwong, D. L.

PY - 2002

Y1 - 2002

N2 - A systematic study of long-term reliability of ultra thin CVD HfO2 gate stack (EOT = 10.5Å) with TaN gate electrode is presented. The polarity and area dependence and temperature acceleration of time-to-breakdown (TBD), defect generation rate, and critical defect density are studied. It is found that TBD is polarity-independent (TBD,-Vg = TBD, + Vg). TDDB lifetime acceleration shows that 10-year lifetime of HfO2 gate stack is projected at Vg = 1.63 V for EOT = 8.6Å and Vg = l.88 V for EOT = 10.6 Å, at 25°C. However, after temperature acceleration of 150°C, area scaling to 0.1 cm2, and the projection to low percentage failure rote of 0.01%, the maximum operating voltages are projected to be Vg = 0.6 V for EOT = 8.6 Å and Vg = 0.75 V for EOT = 10.6 Å.

AB - A systematic study of long-term reliability of ultra thin CVD HfO2 gate stack (EOT = 10.5Å) with TaN gate electrode is presented. The polarity and area dependence and temperature acceleration of time-to-breakdown (TBD), defect generation rate, and critical defect density are studied. It is found that TBD is polarity-independent (TBD,-Vg = TBD, + Vg). TDDB lifetime acceleration shows that 10-year lifetime of HfO2 gate stack is projected at Vg = 1.63 V for EOT = 8.6Å and Vg = l.88 V for EOT = 10.6 Å, at 25°C. However, after temperature acceleration of 150°C, area scaling to 0.1 cm2, and the projection to low percentage failure rote of 0.01%, the maximum operating voltages are projected to be Vg = 0.6 V for EOT = 8.6 Å and Vg = 0.75 V for EOT = 10.6 Å.

UR - https://www.scopus.com/pages/publications/0036054242

M3 - Paper

AN - SCOPUS:0036054242

SP - 78

EP - 79

T2 - 2002 Symposium on VLSI Technology Digest of Technical Papers

Y2 - 11 June 2002 through 13 June 2002

ER -

Reliability projection and polarity dependence of TDDB for ultra thin CVD HfO₂ gate dielectrics

Abstract

Conference

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