Reliability of coplanar oxide TFTs: Analysis and improvement

Ju Heyuck Baeck; Saeroonter Oh; Dohyung Lee; Taeuk Park; Jong Uk Bae; Kwon Shik Park; Soo Yong Yoon; In Byeong Kang

doi:10.1002/sdtp.11611

Reliability of coplanar oxide TFTs: Analysis and improvement

Ju Heyuck Baeck
, Saeroonter Oh
, Dohyung Lee
, Taeuk Park
, Jong Uk Bae
, Kwon Shik Park
, Soo Yong Yoon
, In Byeong Kang

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

We confirm that, the PBTS instability, of coplanar, InGaZnO TFTs can be improved, through the minimization of Non-Bridging Oxygen Vole Centers (NBOHC) and, optimization of hydrogen passivation in the GI/ACT interface region. The quantitative analysis of hydrogen and, oxygen in each region are obtained from physical property measurements. Trap density in GI/ACT interface layer is obtained by photonic capacitance-voltage measurements which are correlated, with PBTS characteristics. A decrease of under, coordinated bonding states lessens electron trap density, which brings improvement, in PBTS from V_th = 2.61V to 0.21V by process optimization.

Original language	English
Pages (from-to)	294-296
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	48
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.11611
State	Published - 2017
Externally published	Yes
Event	SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States Duration: 21 May 2017 → 26 May 2017

Keywords

A-IGZO
Coplanar
ERDA
Interface trap density (D)
Oxide TFT
PBTS
Phto C-V method
RBS
Top-gate
XRR

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10.1002/sdtp.11611

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title = "Reliability of coplanar oxide TFTs: Analysis and improvement",

abstract = "We confirm that, the PBTS instability, of coplanar, InGaZnO TFTs can be improved, through the minimization of Non-Bridging Oxygen Vole Centers (NBOHC) and, optimization of hydrogen passivation in the GI/ACT interface region. The quantitative analysis of hydrogen and, oxygen in each region are obtained from physical property measurements. Trap density in GI/ACT interface layer is obtained by photonic capacitance-voltage measurements which are correlated, with PBTS characteristics. A decrease of under, coordinated bonding states lessens electron trap density, which brings improvement, in PBTS from Vth = 2.61V to 0.21V by process optimization.",

keywords = "A-IGZO, Coplanar, ERDA, Interface trap density (D), Oxide TFT, PBTS, Phto C-V method, RBS, Top-gate, XRR",

author = "Baeck, \{Ju Heyuck\} and Saeroonter Oh and Dohyung Lee and Taeuk Park and \{Uk Bae\}, Jong and Park, \{Kwon Shik\} and Yoon, \{Soo Yong\} and Kang, \{In Byeong\}",

note = "Publisher Copyright: {\textcopyright} (2017) by SID-the Society for Information Display. All rights reserved.; SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 ; Conference date: 21-05-2017 Through 26-05-2017",

year = "2017",

doi = "10.1002/sdtp.11611",

language = "English",

volume = "48",

pages = "294--296",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc",

number = "1",

}

TY - JOUR

T1 - Reliability of coplanar oxide TFTs

T2 - SID Symposium, Seminar, and Exhibition 2017, Display Week 2017

AU - Baeck, Ju Heyuck

AU - Oh, Saeroonter

AU - Lee, Dohyung

AU - Park, Taeuk

AU - Uk Bae, Jong

AU - Park, Kwon Shik

AU - Yoon, Soo Yong

AU - Kang, In Byeong

PY - 2017

Y1 - 2017

N2 - We confirm that, the PBTS instability, of coplanar, InGaZnO TFTs can be improved, through the minimization of Non-Bridging Oxygen Vole Centers (NBOHC) and, optimization of hydrogen passivation in the GI/ACT interface region. The quantitative analysis of hydrogen and, oxygen in each region are obtained from physical property measurements. Trap density in GI/ACT interface layer is obtained by photonic capacitance-voltage measurements which are correlated, with PBTS characteristics. A decrease of under, coordinated bonding states lessens electron trap density, which brings improvement, in PBTS from Vth = 2.61V to 0.21V by process optimization.

AB - We confirm that, the PBTS instability, of coplanar, InGaZnO TFTs can be improved, through the minimization of Non-Bridging Oxygen Vole Centers (NBOHC) and, optimization of hydrogen passivation in the GI/ACT interface region. The quantitative analysis of hydrogen and, oxygen in each region are obtained from physical property measurements. Trap density in GI/ACT interface layer is obtained by photonic capacitance-voltage measurements which are correlated, with PBTS characteristics. A decrease of under, coordinated bonding states lessens electron trap density, which brings improvement, in PBTS from Vth = 2.61V to 0.21V by process optimization.

KW - A-IGZO

KW - Coplanar

KW - ERDA

KW - Interface trap density (D)

KW - Oxide TFT

KW - PBTS

KW - Phto C-V method

KW - RBS

KW - Top-gate

KW - XRR

UR - https://www.scopus.com/pages/publications/85040919578

U2 - 10.1002/sdtp.11611

DO - 10.1002/sdtp.11611

M3 - Conference article

AN - SCOPUS:85040919578

SN - 0097-966X

VL - 48

SP - 294

EP - 296

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

Y2 - 21 May 2017 through 26 May 2017

ER -

Reliability of coplanar oxide TFTs: Analysis and improvement

Abstract

Keywords

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