TY - JOUR
T1 - Relative activation energy for laser-induced crystallization of phase change materials
AU - Park, Taejin
AU - Cho, Mann Ho
AU - Kim, Hyoungsub
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics. © 2018 The Japan Society of Applied Physics.
PY - 2019/1
Y1 - 2019/1
N2 - The relative activation energy (E a ∗ ) derived from a pulsed laser-induced crystallization of phase change materials (PCMs) was suggested as a useful quantitative parameter to represent the practical switching speed, energy consumption, and storage reliability of phase change random access memory (PRAM). We employed the time-for-constant-fraction technique using the reflectivity change of PCMs and the irradiated laser power/pulse width. Using the suggested method, the E a ∗ values for the Ge 2 Sb 2 Te 5 (GST), Bi-doped GST (5.9 at%), and Sn-doped GST (17.7 at%) films were determined to be 6.34 × 10 -9 , 4.56 × 10 -9 , and 3.77 × 10 -9 J, respectively, which reflected their expected device performances of PRAM.
AB - The relative activation energy (E a ∗ ) derived from a pulsed laser-induced crystallization of phase change materials (PCMs) was suggested as a useful quantitative parameter to represent the practical switching speed, energy consumption, and storage reliability of phase change random access memory (PRAM). We employed the time-for-constant-fraction technique using the reflectivity change of PCMs and the irradiated laser power/pulse width. Using the suggested method, the E a ∗ values for the Ge 2 Sb 2 Te 5 (GST), Bi-doped GST (5.9 at%), and Sn-doped GST (17.7 at%) films were determined to be 6.34 × 10 -9 , 4.56 × 10 -9 , and 3.77 × 10 -9 J, respectively, which reflected their expected device performances of PRAM.
UR - https://www.scopus.com/pages/publications/85059853637
U2 - 10.7567/1347-4065/aaf059
DO - 10.7567/1347-4065/aaf059
M3 - Article
AN - SCOPUS:85059853637
SN - 0021-4922
VL - 58
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 1
M1 - 018004
ER -