Relationship between indium tin oxide surface treatment and hole injection in C60 modified devices

Sung Hyun Kim; Jyongsik Jang; Jun Yeob Lee

doi:10.1063/1.2410224

Relationship between indium tin oxide surface treatment and hole injection in C60 modified devices

Sung Hyun Kim
, Jyongsik Jang
, Jun Yeob Lee

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

The effect of indium tin oxide (ITO) surface treatment on hole injection in organic light-emitting diode with C60 as a buffer layer on ITO was studied. Double surface dipole layer was induced on oxygen plasma treated ITO surface, while no dipole formation was observed on ITO without surface treatment. Interfacial energy barrier between ITO and hole transport layer was reduced by 0.4 eV by C60 modification on oxygen plasma treated ITO surface, while there was no change of interfacial energy barrier by C60 on ITO without surface treatment.

Original language	English
Article number	253501
Journal	Applied Physics Letters
Volume	89
Issue number	25
DOIs	https://doi.org/10.1063/1.2410224
State	Published - 2006
Externally published	Yes

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10.1063/1.2410224

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title = "Relationship between indium tin oxide surface treatment and hole injection in C60 modified devices",

abstract = "The effect of indium tin oxide (ITO) surface treatment on hole injection in organic light-emitting diode with C60 as a buffer layer on ITO was studied. Double surface dipole layer was induced on oxygen plasma treated ITO surface, while no dipole formation was observed on ITO without surface treatment. Interfacial energy barrier between ITO and hole transport layer was reduced by 0.4 eV by C60 modification on oxygen plasma treated ITO surface, while there was no change of interfacial energy barrier by C60 on ITO without surface treatment.",

author = "Kim, \{Sung Hyun\} and Jyongsik Jang and Lee, \{Jun Yeob\}",

year = "2006",

doi = "10.1063/1.2410224",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

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T1 - Relationship between indium tin oxide surface treatment and hole injection in C60 modified devices

AU - Kim, Sung Hyun

AU - Jang, Jyongsik

AU - Lee, Jun Yeob

PY - 2006

Y1 - 2006

N2 - The effect of indium tin oxide (ITO) surface treatment on hole injection in organic light-emitting diode with C60 as a buffer layer on ITO was studied. Double surface dipole layer was induced on oxygen plasma treated ITO surface, while no dipole formation was observed on ITO without surface treatment. Interfacial energy barrier between ITO and hole transport layer was reduced by 0.4 eV by C60 modification on oxygen plasma treated ITO surface, while there was no change of interfacial energy barrier by C60 on ITO without surface treatment.

AB - The effect of indium tin oxide (ITO) surface treatment on hole injection in organic light-emitting diode with C60 as a buffer layer on ITO was studied. Double surface dipole layer was induced on oxygen plasma treated ITO surface, while no dipole formation was observed on ITO without surface treatment. Interfacial energy barrier between ITO and hole transport layer was reduced by 0.4 eV by C60 modification on oxygen plasma treated ITO surface, while there was no change of interfacial energy barrier by C60 on ITO without surface treatment.

UR - https://www.scopus.com/pages/publications/33845919769

U2 - 10.1063/1.2410224

DO - 10.1063/1.2410224

M3 - Article

AN - SCOPUS:33845919769

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 253501

ER -

Relationship between indium tin oxide surface treatment and hole injection in C60 modified devices

Abstract

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