Reduction of charge trapping in high-κ HfZrO4 gate insulators

A. Reum Park; Byoung Deog Choi

Reduction of charge trapping in high-κ HfZrO₄ gate insulators

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Hafnium-zirconium-oxide (HfZrO₄) films prepared by incorporating hydrogen peroxide (H₂O₂) exhibited reduced capacitance-voltage hysteresis compared to virgin HfZrO₄. These were resulted from the reduction of the oxygen vacancies and charge trapping. The impact of H₂O₂ on the electrical behaviors was identified by analyzing border and interface.

Original language	English
Title of host publication	25th International Display Workshops, IDW 2018
Publisher	International Display Workshops
Pages	536-538
Number of pages	3
ISBN (Electronic)	9781510883918
State	Published - 2018
Externally published	Yes
Event	25th International Display Workshops, IDW 2018 - Nagoya, Japan Duration: 12 Dec 2018 → 14 Dec 2018

Publication series

Name	Proceedings of the International Display Workshops
Volume	2
ISSN (Print)	1883-2490

Conference

Conference	25th International Display Workshops, IDW 2018
Country/Territory	Japan
City	Nagoya
Period	12/12/18 → 14/12/18

Keywords

Hafnium oxide
High-k dielectric
Zirconium oxide

Cite this

@inproceedings{07a518ae18d04055a872a1ffe849f90e,

title = "Reduction of charge trapping in high-κ HfZrO4 gate insulators",

abstract = "Hafnium-zirconium-oxide (HfZrO4) films prepared by incorporating hydrogen peroxide (H2O2) exhibited reduced capacitance-voltage hysteresis compared to virgin HfZrO4. These were resulted from the reduction of the oxygen vacancies and charge trapping. The impact of H2O2 on the electrical behaviors was identified by analyzing border and interface.",

keywords = "Hafnium oxide, High-k dielectric, Zirconium oxide",

author = "Park, \{A. Reum\} and Choi, \{Byoung Deog\}",

note = "Publisher Copyright: {\textcopyright} 2018 International Display Workshops. All rights reserved.; 25th International Display Workshops, IDW 2018 ; Conference date: 12-12-2018 Through 14-12-2018",

year = "2018",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "536--538",

booktitle = "25th International Display Workshops, IDW 2018",

address = "Japan",

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TY - GEN

T1 - Reduction of charge trapping in high-κ HfZrO4 gate insulators

AU - Park, A. Reum

AU - Choi, Byoung Deog

PY - 2018

Y1 - 2018

N2 - Hafnium-zirconium-oxide (HfZrO4) films prepared by incorporating hydrogen peroxide (H2O2) exhibited reduced capacitance-voltage hysteresis compared to virgin HfZrO4. These were resulted from the reduction of the oxygen vacancies and charge trapping. The impact of H2O2 on the electrical behaviors was identified by analyzing border and interface.

AB - Hafnium-zirconium-oxide (HfZrO4) films prepared by incorporating hydrogen peroxide (H2O2) exhibited reduced capacitance-voltage hysteresis compared to virgin HfZrO4. These were resulted from the reduction of the oxygen vacancies and charge trapping. The impact of H2O2 on the electrical behaviors was identified by analyzing border and interface.

KW - Hafnium oxide

KW - High-k dielectric

KW - Zirconium oxide

UR - https://www.scopus.com/pages/publications/85072101560

M3 - Conference contribution

AN - SCOPUS:85072101560

T3 - Proceedings of the International Display Workshops

SP - 536

EP - 538

BT - 25th International Display Workshops, IDW 2018

PB - International Display Workshops

T2 - 25th International Display Workshops, IDW 2018

Y2 - 12 December 2018 through 14 December 2018

ER -