Realization of vertically well-aligned ZnO:Ga nanorods by magnetron sputtering and their field emission behavior

Si Woo Kang; S. K. Mohanta; Young Yi Kim; Hyung Koun Cho

doi:10.1021/cg701216f

Realization of vertically well-aligned ZnO:Ga nanorods by magnetron sputtering and their field emission behavior

Si Woo Kang
, S. K. Mohanta
, Young Yi Kim
, Hyung Koun Cho

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

We report catalyst-free growth of one-dimensional Ga-doped ZnO nanorod arrays on (001) Si substrate with a thin buffer layer by magnetron sputtering. The diameter and length of the nanorods are in the range of 90-144 nm and about 1.38 μπι, with an aspect ratio nearly 12:1 and deviation angle ± 6° between the [0001]_Zno direction and substrate normal. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission. The good field emission properties of the nanorod arrays with turn-on field of 2.9 V/μm and enhancement factor of 2027 demonstrate the perfect single-crystalline growth of ZnO:Ga nanorods with similar vertical alignment.

Original language	English
Pages (from-to)	1458-1460
Number of pages	3
Journal	Crystal Growth and Design
Volume	8
Issue number	5
DOIs	https://doi.org/10.1021/cg701216f
State	Published - May 2008

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title = "Realization of vertically well-aligned ZnO:Ga nanorods by magnetron sputtering and their field emission behavior",

abstract = "We report catalyst-free growth of one-dimensional Ga-doped ZnO nanorod arrays on (001) Si substrate with a thin buffer layer by magnetron sputtering. The diameter and length of the nanorods are in the range of 90-144 nm and about 1.38 μπι, with an aspect ratio nearly 12:1 and deviation angle ± 6° between the [0001]Zno direction and substrate normal. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission. The good field emission properties of the nanorod arrays with turn-on field of 2.9 V/μm and enhancement factor of 2027 demonstrate the perfect single-crystalline growth of ZnO:Ga nanorods with similar vertical alignment.",

author = "Kang, \{Si Woo\} and Mohanta, \{S. K.\} and Kim, \{Young Yi\} and Cho, \{Hyung Koun\}",

year = "2008",

month = may,

doi = "10.1021/cg701216f",

language = "English",

volume = "8",

pages = "1458--1460",

journal = "Crystal Growth and Design",

issn = "1528-7483",

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T1 - Realization of vertically well-aligned ZnO:Ga nanorods by magnetron sputtering and their field emission behavior

AU - Kang, Si Woo

AU - Mohanta, S. K.

AU - Kim, Young Yi

AU - Cho, Hyung Koun

PY - 2008/5

Y1 - 2008/5

N2 - We report catalyst-free growth of one-dimensional Ga-doped ZnO nanorod arrays on (001) Si substrate with a thin buffer layer by magnetron sputtering. The diameter and length of the nanorods are in the range of 90-144 nm and about 1.38 μπι, with an aspect ratio nearly 12:1 and deviation angle ± 6° between the [0001]Zno direction and substrate normal. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission. The good field emission properties of the nanorod arrays with turn-on field of 2.9 V/μm and enhancement factor of 2027 demonstrate the perfect single-crystalline growth of ZnO:Ga nanorods with similar vertical alignment.

AB - We report catalyst-free growth of one-dimensional Ga-doped ZnO nanorod arrays on (001) Si substrate with a thin buffer layer by magnetron sputtering. The diameter and length of the nanorods are in the range of 90-144 nm and about 1.38 μπι, with an aspect ratio nearly 12:1 and deviation angle ± 6° between the [0001]Zno direction and substrate normal. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission. The good field emission properties of the nanorod arrays with turn-on field of 2.9 V/μm and enhancement factor of 2027 demonstrate the perfect single-crystalline growth of ZnO:Ga nanorods with similar vertical alignment.

UR - https://www.scopus.com/pages/publications/58149239605

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M3 - Article

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SN - 1528-7483

VL - 8

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EP - 1460

JO - Crystal Growth and Design

JF - Crystal Growth and Design

IS - 5

ER -

Realization of vertically well-aligned ZnO:Ga nanorods by magnetron sputtering and their field emission behavior

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