Real-time pulse measurement of nano-scale field effect transistors: Cancellation of displacement current and extraction of coupling capacitance

Real-time pulse measurements of nano-scale field effect transistors (FETs) are reported. We demonstrate the direct monitoring of the real-time current of bottom-up assembled silicon nanowire FET and top-down fabricated gate-all-around silicon nanowire FET, both with the diameter of approximately 50 nm. We demonstrate that the displacement current can be cancelled out from the measured pulse responses. On the other hand, the displacement current also can be utilized to obtain the coupling capacitance between the gate and source of the FETs.