Random telegraph noise in GaN-based light-emitting diodes

T. Kang; J. Park; J. K. Lee; G. Kim; D. Woo; J. K. Son; J. H. Lee; B. G. Park; H. Shin

doi:10.1049/el.2011.1439

Random telegraph noise in GaN-based light-emitting diodes

T. Kang
, J. Park
, J. K. Lee
, G. Kim
, D. Woo
, J. K. Son
, J. H. Lee
, B. G. Park
, H. Shin

Seoul National University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Random telegraph noise (RTN) having two discrete current levels was characterised in reverse current of GaN based light-emitting diodes. Through compared magnitude of the hysteresis with RTN amplitude in reverse current, it is confirmed that RTN causes the current-voltage (I-V) hysteresis. The mechanism of RTN was analysed by using a tunnelling equation. In addition, activation energy of the trap leading to RTN was characterised by analysis of the time constants with voltage and temperature.

Original language	English
Pages (from-to)	873-875
Number of pages	3
Journal	Electronics Letters
Volume	47
Issue number	15
DOIs	https://doi.org/10.1049/el.2011.1439
State	Published - 21 Jul 2011
Externally published	Yes

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10.1049/el.2011.1439

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abstract = "Random telegraph noise (RTN) having two discrete current levels was characterised in reverse current of GaN based light-emitting diodes. Through compared magnitude of the hysteresis with RTN amplitude in reverse current, it is confirmed that RTN causes the current-voltage (I-V) hysteresis. The mechanism of RTN was analysed by using a tunnelling equation. In addition, activation energy of the trap leading to RTN was characterised by analysis of the time constants with voltage and temperature.",

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AU - Kang, T.

AU - Park, J.

AU - Lee, J. K.

AU - Kim, G.

AU - Woo, D.

AU - Son, J. K.

AU - Lee, J. H.

AU - Park, B. G.

AU - Shin, H.

PY - 2011/7/21

Y1 - 2011/7/21

N2 - Random telegraph noise (RTN) having two discrete current levels was characterised in reverse current of GaN based light-emitting diodes. Through compared magnitude of the hysteresis with RTN amplitude in reverse current, it is confirmed that RTN causes the current-voltage (I-V) hysteresis. The mechanism of RTN was analysed by using a tunnelling equation. In addition, activation energy of the trap leading to RTN was characterised by analysis of the time constants with voltage and temperature.

AB - Random telegraph noise (RTN) having two discrete current levels was characterised in reverse current of GaN based light-emitting diodes. Through compared magnitude of the hysteresis with RTN amplitude in reverse current, it is confirmed that RTN causes the current-voltage (I-V) hysteresis. The mechanism of RTN was analysed by using a tunnelling equation. In addition, activation energy of the trap leading to RTN was characterised by analysis of the time constants with voltage and temperature.

UR - https://www.scopus.com/pages/publications/79960611196

U2 - 10.1049/el.2011.1439

DO - 10.1049/el.2011.1439

M3 - Article

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SP - 873

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JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

Random telegraph noise in GaN-based light-emitting diodes

Abstract

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