Raman shift and electrical properties of MoS2 bilayer on boron nitride substrate

Lijun Li; Inyeal Lee; Dongsuk Lim; Moonshik Kang; Gil Ho Kim; Nobuyuki Aoki; Yuichi Ochiai; Kenji Watanabe; Takashi Taniguchi

doi:10.1088/0957-4484/26/29/295702

Raman shift and electrical properties of MoS₂ bilayer on boron nitride substrate

Lijun Li
, Inyeal Lee
, Dongsuk Lim
, Moonshik Kang
, Gil Ho Kim
, Nobuyuki Aoki
, Yuichi Ochiai
, Kenji Watanabe
, Takashi Taniguchi

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We have fabricated a bilayer molybdenum disulphide (MoS₂) transistor on boron nitride (BN) substrate and performed Raman spectroscopy and electrical measurements with this device. The characteristic Raman peaks show an upshift about 2.5 cm^-1 with the layer lying on BN, and a narrower line width in comparison with those on a SiO₂ substrate. The device has a maximum drain current larger than 1 μA and a high current on/off ratio of greater than 10⁸. In the temperature range of 100 K-293 K, the two terminal gate effect mobility and the carrier density do not change significantly with temperature. Results of the Raman and electrical measurements reveal that BN is a suitable substrate for atomic layer electrical devices.

Original language	English
Article number	295702
Journal	Nanotechnology
Volume	26
Issue number	29
DOIs	https://doi.org/10.1088/0957-4484/26/29/295702
State	Published - 24 Jul 2015
Externally published	Yes

Keywords

mobility
MoS
on/off ratio
Raman shift

Access to Document

10.1088/0957-4484/26/29/295702

Cite this

@article{e5e1edc3d6d447219c6e108b47b12eac,

title = "Raman shift and electrical properties of MoS2 bilayer on boron nitride substrate",

abstract = "We have fabricated a bilayer molybdenum disulphide (MoS2) transistor on boron nitride (BN) substrate and performed Raman spectroscopy and electrical measurements with this device. The characteristic Raman peaks show an upshift about 2.5 cm-1 with the layer lying on BN, and a narrower line width in comparison with those on a SiO2 substrate. The device has a maximum drain current larger than 1 μA and a high current on/off ratio of greater than 108. In the temperature range of 100 K-293 K, the two terminal gate effect mobility and the carrier density do not change significantly with temperature. Results of the Raman and electrical measurements reveal that BN is a suitable substrate for atomic layer electrical devices.",

keywords = "mobility, MoS, on/off ratio, Raman shift",

author = "Lijun Li and Inyeal Lee and Dongsuk Lim and Moonshik Kang and Kim, \{Gil Ho\} and Nobuyuki Aoki and Yuichi Ochiai and Kenji Watanabe and Takashi Taniguchi",

note = "Publisher Copyright: {\textcopyright} 2015 IOP Publishing Ltd.",

year = "2015",

month = jul,

day = "24",

doi = "10.1088/0957-4484/26/29/295702",

language = "English",

volume = "26",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "29",

}

TY - JOUR

T1 - Raman shift and electrical properties of MoS2 bilayer on boron nitride substrate

AU - Li, Lijun

AU - Lee, Inyeal

AU - Lim, Dongsuk

AU - Kang, Moonshik

AU - Kim, Gil Ho

AU - Aoki, Nobuyuki

AU - Ochiai, Yuichi

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

PY - 2015/7/24

Y1 - 2015/7/24

N2 - We have fabricated a bilayer molybdenum disulphide (MoS2) transistor on boron nitride (BN) substrate and performed Raman spectroscopy and electrical measurements with this device. The characteristic Raman peaks show an upshift about 2.5 cm-1 with the layer lying on BN, and a narrower line width in comparison with those on a SiO2 substrate. The device has a maximum drain current larger than 1 μA and a high current on/off ratio of greater than 108. In the temperature range of 100 K-293 K, the two terminal gate effect mobility and the carrier density do not change significantly with temperature. Results of the Raman and electrical measurements reveal that BN is a suitable substrate for atomic layer electrical devices.

AB - We have fabricated a bilayer molybdenum disulphide (MoS2) transistor on boron nitride (BN) substrate and performed Raman spectroscopy and electrical measurements with this device. The characteristic Raman peaks show an upshift about 2.5 cm-1 with the layer lying on BN, and a narrower line width in comparison with those on a SiO2 substrate. The device has a maximum drain current larger than 1 μA and a high current on/off ratio of greater than 108. In the temperature range of 100 K-293 K, the two terminal gate effect mobility and the carrier density do not change significantly with temperature. Results of the Raman and electrical measurements reveal that BN is a suitable substrate for atomic layer electrical devices.

KW - mobility

KW - MoS

KW - on/off ratio

KW - Raman shift

UR - https://www.scopus.com/pages/publications/84936083864

U2 - 10.1088/0957-4484/26/29/295702

DO - 10.1088/0957-4484/26/29/295702

M3 - Article

AN - SCOPUS:84936083864

SN - 0957-4484

VL - 26

JO - Nanotechnology

JF - Nanotechnology

IS - 29

M1 - 295702

ER -

Raman shift and electrical properties of MoS₂ bilayer on boron nitride substrate

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this