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Raman scattering and photoluminescence analysis of B-doped CdS thin films

  • Kunsan National University

Research output: Contribution to journalConference articlepeer-review

Abstract

Boron-doped CdS thin films were chemically deposited onto glass substrates. X-Ray diffraction (XRD), photoluminescence (PL), and Raman techniques were used to evaluate the quality of B-doped CdS films. XRD results have confirmed that B-doped CdS films have a hexagonal structure with a preferential orientation of the (002) plane. The grain size of B-doped CdS films slightly decreases, but no change of the microstructure was observed. The PL spectra for all samples consist of two prominent broad bands approximately 2.3 eV (green emission) and 1.6 eV (red emission) and the higher doping concentrations gradually decreased the green emission and red emission. Raman analysis has shown that undoped films have structure superior to those of B-doped CdS films.

Original languageEnglish
Pages (from-to)170-174
Number of pages5
JournalThin Solid Films
Volume451-452
DOIs
StatePublished - 22 Mar 2004
Externally publishedYes
EventProceedings of Symposium D on Thin Film and Nano-Structured - Strasbourg, France
Duration: 10 Jun 200313 Jun 2003

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • Boron
  • Cadmium sulfide
  • Raman scattering
  • Solar cells

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