Abstract
Raman scattering analysis is used to study the residual stress in metal-induced crystallized amorphous silicon thin film. The influence of the crystallization parameters on thin film properties is investigated as a function of annealing temperature, annealing time, and nickel top-seed-layer thickness. Thin films produced under optimal annealing conditions are measured to have crystallization efficiency of about 98%, which is full crystallization. Residual stress analysis reveals clear stress reduction with prolonged annealing time and Ni capping layer thickness. A very low tensile stress of about 87 MPa is achieved. The relationships between optimal crystallization temperature, crystallization time, and Ni-layer thickness are described.
| Original language | English |
|---|---|
| Pages (from-to) | 8252-8256 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 255 |
| Issue number | 19 |
| DOIs | |
| State | Published - 15 Jul 2009 |
Keywords
- Amorphous silicon
- Metal-induced crystallization (MIC)
- Nickel
- Polycrystalline
- Raman spectrum
- Residual stress
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