Quantum dot-carbon nanotube hybrid phototransistor with an enhanced optical stark effect

Enhanced carrier-carrier interactions in hybrid nanostructures exhibit exceptional electronic and optoelectronic properties. Carbon nanotubes demonstrate excellent switching behavior with high on/off ratio and high mobility but do not show photoresponse in the visible range, whereas quantum dots (QDs) shows excellent optical response in various optical ranges which can be tuned with diameter. Here, a simple and effective way to develop hybrid phototransistors with extraordinary optoelectronic properties is presented by decorating semiconducting QDs on the surface of a single-walled carbon nanotube (SWCNT). This hybrid structure demonstrates clear negative photoresponse and optical switching behavior, which could be further tuned by applying external gate bias in the future. A clear type conversion of SWCNT transistor from p-type to n-type caused by a charge transfer from attached QDs to CNT is demonstrated. Moreover, this hybrid structure also demonstrates an enhancement in 'optical Stark effect' without applying any external electric field. Charged SWCNT surface plays a key role behind the enhancement of optical Stark effect in QDs. The carrier dynamics of the QD and CNT heterostructures system highlights the potential application opportunity of the quantum dot systems, which can be adaptable to the current technologies. A simple and effective way to develop hybrid phototransistor with extraordinary optoelectronic properties is achieved by decorating semiconducting quantum dots (QDs) on a single-walled carbon nanotube (SWCNT) surface. This hybrid structure demonstrates clear negative photoresponse and optical switching behavior, which could be further tuned by applying external gate bias in the future. Moreover, this hybrid structure also demonstrates an enhancement in the optical Stark effect without applying any external electric field.