Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy

Jungwon Woo; Seungbum Hong; Nava Setter; Hyunjung Shin; Jong Up Jeon; Y. Eugene Pak; Kwangsoo No

doi:10.1116/1.1364697

Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy

Jungwon Woo
, Seungbum Hong
, Nava Setter
, Hyunjung Shin
, Jong Up Jeon
, Y. Eugene Pak
, Kwangsoo No

Korea Advanced Institute of Science and Technology
Swiss Federal Institute of Technology Lausanne
Samsung

Research output: Contribution to journal › Conference article › peer-review

81 Scopus citations

Abstract

The bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices was studied by applying pulses through the atomic force microscopy (ATM). The electrical field distribution inside the Pb(Zr_0.4Ti_0.6)O₃ (PZT) films was calculated to predict the bit size variation with the pulse width and the pulse voltage. The linear dependence of the bit size on the logarithmic value of the pulse width was also investigated. It was found that the minimum stable bit size exists which equals the film thickness.

Original language	English
Pages (from-to)	818-824
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.1364697
State	Published - May 2001
Externally published	Yes
Event	13th International Vaccum Microelectronics Conference - Guangzhou, China Duration: 14 Aug 2000 → 17 Aug 2000

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10.1116/1.1364697

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title = "Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy",

abstract = "The bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices was studied by applying pulses through the atomic force microscopy (ATM). The electrical field distribution inside the Pb(Zr0.4Ti0.6)O3 (PZT) films was calculated to predict the bit size variation with the pulse width and the pulse voltage. The linear dependence of the bit size on the logarithmic value of the pulse width was also investigated. It was found that the minimum stable bit size exists which equals the film thickness.",

author = "Jungwon Woo and Seungbum Hong and Nava Setter and Hyunjung Shin and Jeon, \{Jong Up\} and Pak, \{Y. Eugene\} and Kwangsoo No",

year = "2001",

month = may,

doi = "10.1116/1.1364697",

language = "English",

volume = "19",

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journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

note = "13th International Vaccum Microelectronics Conference ; Conference date: 14-08-2000 Through 17-08-2000",

}

Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy. / Woo, Jungwon; Hong, Seungbum; Setter, Nava et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 3, 05.2001, p. 818-824.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy

AU - Woo, Jungwon

AU - Hong, Seungbum

AU - Setter, Nava

AU - Shin, Hyunjung

AU - Jeon, Jong Up

AU - Pak, Y. Eugene

AU - No, Kwangsoo

PY - 2001/5

Y1 - 2001/5

N2 - The bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices was studied by applying pulses through the atomic force microscopy (ATM). The electrical field distribution inside the Pb(Zr0.4Ti0.6)O3 (PZT) films was calculated to predict the bit size variation with the pulse width and the pulse voltage. The linear dependence of the bit size on the logarithmic value of the pulse width was also investigated. It was found that the minimum stable bit size exists which equals the film thickness.

AB - The bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices was studied by applying pulses through the atomic force microscopy (ATM). The electrical field distribution inside the Pb(Zr0.4Ti0.6)O3 (PZT) films was calculated to predict the bit size variation with the pulse width and the pulse voltage. The linear dependence of the bit size on the logarithmic value of the pulse width was also investigated. It was found that the minimum stable bit size exists which equals the film thickness.

UR - https://www.scopus.com/pages/publications/0035326441

U2 - 10.1116/1.1364697

DO - 10.1116/1.1364697

M3 - Conference article

AN - SCOPUS:0035326441

SN - 1071-1023

VL - 19

SP - 818

EP - 824

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 13th International Vaccum Microelectronics Conference

Y2 - 14 August 2000 through 17 August 2000

ER -

Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy

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